Semiconductor Bonding Structure for CMP Dishing and Erosion Repair
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Solution Overview
Problem
Chemical mechanical polishing (CMP) processes for semiconductor wafers often result in dishing and dielectric erosion, which can lead to poor planarization and unsuitable surfaces for hybrid bonding, causing structural and electrical connectivity issues.
Innovation Solution
The use of semiconductor processing tools to grow conductive materials to fill dishing voids and employ nitrogen plasma to address dielectric erosion, along with plasma-enhanced chemical vapor deposition (PECVD) to enhance surface purity and reduce metal oxide formation, creating a uniform bonding interface without the need for post-bonding annealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CMP process is used for planarization, then surface flatness is improved, but bonding interface quality deteriorates due to dishing and erosion
Solution Approach 1:
The patent converts the harmful effects of CMP (dishing and erosion) into beneficial outcomes by using targeted conductive material deposition to fill the dished areas and plasma treatment to remove eroded dielectric material. This transforms the CMP defects into opportunities for precise material addition and removal, ultimately improving bonding interface quality.
Solution Approach 2:
The patent changes the physical and chemical parameters of the bonding interface through multiple processes: depositing conductive materials to alter surface topology, applying plasma to modify surface chemistry and remove contaminants, and using PECVD to enhance surface purity. These parameter changes collectively improve bonding interface quality despite CMP-induced damage.
2Device complexity
If conventional planarization is used, then processing simplicity is maintained, but mechanical strength at bonding interface is insufficient
Solution Approach 1:
The patent performs preliminary strengthening actions by depositing conductive materials and applying plasma treatments to the bonding interface before hybrid bonding. These preliminary actions create a more robust interface that can withstand mechanical stress, eliminating the need for post-bonding annealing while significantly improving mechanical strength.
Solution Approach 2:
The patent creates a composite structure at the bonding interface by combining multiple materials (conductive materials, dielectric materials, plasma-treated surfaces) to achieve enhanced mechanical strength. This composite approach allows the bonding interface to withstand mechanical stress better than any single material could provide alone.
3Manufacturing precision
If CMP process is used, then initial planarization is achieved, but void formation increases at bonding interface
Solution Approach 1:
The patent changes the surface parameters through conductive material deposition and plasma treatment to eliminate voids at the bonding interface. The conductive materials fill in depressed areas and the plasma treatment removes contaminants and eroded material, creating a uniform interface that prevents void formation during bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves planarization, increases mechanical strength at the bonding interface, reduces void formation, and enhances electrical conductivity, enabling multi-wafer stacking with improved resistance to mechanical stress and reduced metal degradation.
Implementation Method 1
semiconductor processing tools to grow conductive materials to fill dishing voids
Implementation Method 2
employ nitrogen plasma to address dielectric erosion
Implementation Method 3
plasma-enhanced chemical vapor deposition (PECVD) to enhance surface purity
Implementation Method 4
plasma-enhanced chemical vapor deposition (PECVD) to enhance surface purity and reduce metal oxide formation
Data Source
AI summary
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.