Semiconductor Die Bonding Structure With DLC Heat Dissipation
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving efficient heat dissipation and packaging techniques for System-on-Integrated-Circuit (SoIC) components, particularly due to the limitations of existing bonding materials and processes which do not adequately address thermal conductivity and hot spot issues in miniaturized electronic devices.
Innovation Solution
The use of patterned bonding dielectric layers with high thermal conductivity, such as diamond-like carbon (DLC), is integrated into the semiconductor die fabrication process, enabling effective heat dissipation through dielectric-to-dielectric and metal-to-metal bonding interfaces in various SoIC components and integrated fan-out packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional bonding materials and processes are used in SoIC components, then manufacturing simplicity is maintained, but thermal conductivity is insufficient leading to hot spot issues
Solution Approach 1:
The patent employs diamond-like carbon (DLC) dielectric layers with high thermal conductivity as a composite material solution. The DLC layer is integrated into the bonding structure between semiconductor dies, providing enhanced thermal pathways while maintaining dielectric functionality. This composite approach resolves the contradiction by incorporating high-thermal-conductivity material without fundamentally changing the bonding process architecture.
Solution Approach 2:
The patent applies high thermal conductivity DLC material specifically at the bonding interfaces where heat dissipation is most critical. Rather than uniformly treating the entire device, the DLC dielectric layers are localized at the die-to-die and die-to-substrate bonding interfaces, providing targeted thermal management where hot spots occur most frequently in miniaturized SoIC components.
2Productivity
If minimum feature size is continuously reduced to increase integration density, then component integration increases, but heat dissipation efficiency deteriorates
Solution Approach 1:
The DLC dielectric layers serve as high-thermal-conductivity composite materials embedded within the miniaturized bonding structures. As feature sizes shrink and integration density increases, the DLC layers provide scalable thermal pathways that maintain effective heat dissipation even in highly integrated SoIC components with reduced pitch and smaller die dimensions.
Solution Approach 2:
The patent changes the thermal conductivity parameter of the bonding dielectric material from conventional low-conductivity materials to high-conductivity DLC material. This parameter change enables effective heat dissipation in miniaturized devices by providing high-thermal-conductivity pathways that scale with the reduced feature sizes and increased integration density of modern SoIC components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the thermal conductivity of SoIC components, effectively addressing hot spot issues and improving the heat dissipation performance of miniaturized electronic devices, thereby supporting the demands for higher speed, lower power consumption, and increased integration density.
Implementation Method 1
patterned bonding dielectric layers with high thermal conductivity, such as diamond-like carbon (DLC), is integrated into the semiconductor die fabrication process, enabling effective heat dissipation
Data Source
AI summary
A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.