Semiconductor Package Bonding Reliability via Dummy Pad Segmentation
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Solution Overview
Problem
The bonding reliability between semiconductor chips in existing semiconductor packages is low, affecting the performance of these packages.
Innovation Solution
A semiconductor package design that includes main pad structures and dummy pad structures between two semiconductor chips, with specific configurations of these pads and capping layers to enhance bonding reliability, using bonding insulating layers to isolate and strengthen the connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding structures are used between semiconductor chips, then the device complexity is low, but the bonding reliability is insufficient
Solution Approach 1:
The bonding structure is segmented into multiple functional components: main pad structures for primary electrical connection, dummy pad structures for stress distribution, and capping layers for protection. This segmentation allows each component to perform its specific function optimally, improving overall bonding reliability while maintaining manageable complexity through modular design
Solution Approach 2:
The patent introduces a vertical stacking dimension by placing capping layers over the pad structures and arranging chips in multiple layers. This three-dimensional configuration increases bonding reliability by providing redundant bonding paths and distributing mechanical stress across multiple interfaces, rather than relying on a single planar bonding interface
2Strength
If only main pad structures are used for bonding, then the manufacturing process is simple, but the bonding strength is insufficient
Solution Approach 1:
Dummy pad structures are formed on the chip surfaces before the bonding process. These dummy pads pre-establish stress distribution patterns and mechanical support structures that enhance the bonding strength of the main pads during subsequent bonding operations, ensuring stronger connections without complicating the core bonding procedure
Solution Approach 2:
The bonding structure employs composite material layers including metal pads, dielectric materials, and capping layers with different mechanical and electrical properties. This composite construction enhances bonding strength by combining materials with complementary characteristics - conductive metals for electrical connection, dielectric materials for insulation and stress management, and protective capping layers for mechanical reinforcement
Data Source
AI summary
A semiconductor package includes main pad structures and dummy pad structures between a first semiconductor chip and a second semiconductor chip. The main pad structures include first main pad structures apart from one another on the first semiconductor chip and second main pad structures placed apart from one another on the second semiconductor chip and bonded to the first main pad structures. The dummy pad structures include first dummy pad structures including first dummy pads apart from one another on the first semiconductor chip and first dummy capping layers on the first dummy pads, and second dummy pad structures including second dummy pads apart from one another on the second semiconductor chip and second dummy capping layers on the second dummy pads. The first dummy capping layers of the first dummy pad structures are not bonded to the second dummy capping layers of the second dummy pad structures.


