Semiconductor Bonding Groove Prevents Protrusion
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Solution Overview
Problem
The bonding portion in semiconductor devices deteriorates under high-temperature environments, leading to issues such as protrusion and subsequent drop-off of the bonding material, causing reliability and efficiency problems, especially in applications like in-vehicle and railway control devices operating at temperatures above 200°C.
Innovation Solution
A manufacturing method involving a bonding material with sinterability is used, where the bonding material is arranged inwardly from the semiconductor element's bonding surface, allowing for pressurized contact and sintering without protrusion, ensuring stable bonding and high-temperature durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a bonding material having sinterability is used and pressurized during bonding, then high-temperature durability of the bonding portion is improved, but the bonding material protrudes around the semiconductor element causing drop-off and short-circuit troubles
Solution Approach 1:
A groove structure is introduced as an intermediary constraint between the bonding material and the surrounding environment. The groove laterally confines the bonding material during sintering and pressurization, preventing protrusion while allowing the material to achieve proper density and bonding strength. This mediator structure resolves the contradiction by enabling high-temperature durability without generating harmful protrusions.
Solution Approach 2:
The invention changes the physical constraints on the bonding material by introducing a groove structure that laterally confines the material. This parameter change in the boundary conditions allows the bonding material to be pressurized and sintered effectively without protruding, thus achieving reliable bonding while preventing the harmful protrusion effect.
2Manufacturing precision
If the bonding material is sufficiently pressurized to prevent protrusion, then bonding quality is improved, but the bonding process becomes more complex and difficult to control
Solution Approach 1:
The groove structure serves as a passive intermediary that automatically confines the bonding material during pressurization. This eliminates the need for complex active control mechanisms to prevent protrusion, as the groove structure inherently guides and constrains the material flow, simplifying the overall bonding process while maintaining high bonding quality.
Solution Approach 2:
The invention addresses the pressurization challenge by adding a lateral confinement dimension through the groove structure. Instead of relying solely on vertical pressurization control, the groove provides lateral boundaries that automatically contain the bonding material, transforming a one-dimensional pressurization problem into a more controlled three-dimensional constraint system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the quality and reliability of the bonding portion, preventing material drop-off and maintaining high-temperature durability, thus improving the semiconductor device's performance and longevity.
Implementation Method 1
the bonding material is sintered by pressurizing and at the same time heating the bonding material between a rear surface of the semiconductor element and a front surface of the substrate
Data Source
AI summary
A manufacturing method of a semiconductor device according to the present invention includes the steps of (a) preparing an insulating or conductive substrate; (b) arranging a bonding material having sinterability in at least one bonding region of a principal surface of the substrate (i.e., insulating substrate); and (c) sintering the bonding material while a bonding surface to be subjected to bonding of at least one semiconductor element is brought into pressurized contact with the bonding material, and bonding the substrate (i.e., insulating substrate) and the semiconductor element together through the bonding material. The bonding region in the step (b) is inwardly positioned from the bonding surface (i.e., region) of the semiconductor element in plan view, and the bonding material is not protruded outwardly from the bonding surface of the semiconductor element in plan view even after the step (c).