3D Semiconductor Heat Dissipation via Bonding Connectors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices with stacked chips face inefficiencies in heat dissipation due to the lack of separate heat radiation means, leading to performance deterioration as heat is not effectively discharged from the integrated package.
Innovation Solution
The semiconductor device incorporates dummy connectors and metal distribution lines for electrical coupling between chips, allowing heat generated from hot spots to be dissipated across the entire device, utilizing these internal connectors to efficiently distribute heat away from concentrated areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chips are stacked using TSV, metal pad, and bump bonding to increase integration, then device performance is improved, but heat dissipation becomes insufficient leading to performance deterioration
Solution Approach 1:
The patent makes the bonding connectors serve dual functions: electrical coupling between chips and heat dissipation pathways. The same TSV, metal pad, and bump structures used for signal transmission are also utilized as thermal conduction paths, eliminating the need for separate heat dissipation components and resolving the contradiction between integration and heat management.
Solution Approach 2:
The patent combines the electrical connection function and thermal management function into a single integrated structure. The bonding connectors between chips simultaneously perform both electrical signal transmission and heat conduction, merging two previously separate functions into one unified system that addresses both performance and thermal issues.
2Reliability
If wire bonding is used for electrical coupling between chips and substrate, then electrical connection is achieved, but additional space is required increasing chip package size
Solution Approach 1:
The patent extracts the wire bonding function and replaces it with direct vertical connections through TSV and bump bonding. By removing the lateral wire routing requirement, the design eliminates the need for additional bonding space and large conductive circuit patterns on the substrate, significantly reducing the overall chip package area while maintaining electrical coupling reliability.
Solution Approach 2:
The patent transitions from lateral wire bonding (2D planar connection) to vertical through-silicon-via connections (3D stacked connection). This dimensional change allows electrical coupling to occur through the thickness of the chips rather than across the substrate plane, eliminating the need for large lateral bonding areas and reducing package size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents performance deterioration by ensuring heat is efficiently discharged from the semiconductor device, improving heat dissipation characteristics and maintaining device performance.
Implementation Method 1
a heat generated from a hot spot of the semiconductor device is dissipated to an entire portion of the semiconductor device through the dummy metal distribution line and the dummy connector
Data Source
AI summary
A semiconductor device having improved heat-dissipation characteristics is capable effectively discharging heat that is generated inside the semiconductor device of a three-dimensional laminated structure, to the outside of the semiconductor device by utilizing an internal connector used during bonding.