Semiconductor Bonding Layout for Void-Induced Hot Spot Suppression
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Solution Overview
Problem
Semiconductor devices experience local temperature increases due to voids in the bonding material, which impede cooling and reduce reliability and productivity.
Innovation Solution
A semiconductor device design that includes a conductive member, a semiconductor element, and a bonding part with a second bonding material in the center region to absorb and diffuse heat generated by the semiconductor element, thereby reducing local temperature increases caused by voids in the bonding material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a bonding material is used to fix the semiconductor element to the metal member, then the semiconductor element is securely bonded, but voids occur in the bonding material causing local temperature increase
Solution Approach 1:
A heat dissipation member (bonding part) is introduced as an intermediary between the semiconductor element and the void in the bonding material. This heat dissipation member conducts heat away from regions above voids, preventing local temperature increase while maintaining the bonding structure's integrity.
Solution Approach 2:
The heat dissipation member is strategically positioned only in regions where voids are likely to occur (such as corners or edges of the semiconductor element), rather than uniformly across the entire bonding area. This localized approach addresses temperature issues specifically where voids exist without compromising overall bonding strength.
2Reliability
If the bonding material is applied uniformly across the semiconductor element, then complete coverage is achieved, but voids still occur with fixed probability affecting cooling efficiency
Solution Approach 1:
The heat dissipation member acts as a mediator that compensates for the inherent imperfections in uniform bonding material application. By providing an additional thermal conduction path through the heat dissipation member, the system maintains reliable cooling even when voids are present in the bonding material.
3Device complexity
If no additional heat management structure is added, then device complexity is low, but local temperature increase reduces reliability
Solution Approach 1:
Rather than implementing a complex comprehensive heat management system, the invention applies a simple heat dissipation member only in specific locations where voids are most likely to occur. This localized solution maintains low overall device complexity while effectively improving reliability by addressing the critical temperature issue.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses local temperature increases, enhances reliability, and improves productivity by ensuring efficient heat management and reduced defect rates.
Implementation Method 1
a bonding part with a second bonding material in the center region to absorb and diffuse heat generated by the semiconductor element, thereby reducing local temperature increases
Implementation Method 2
When the bonding material includes the void, cooling of the semiconductor element immediately above the void is prevented, and a temperature of the semiconductor element locally increases
Data Source
AI summary
Provided is a semiconductor device reducing local increase in temperature caused by a void in a bonding material. A semiconductor device includes a conductive member, a semiconductor element, a bonding part, and a lead. The semiconductor element includes a switching element. The semiconductor element is held by the conductive member via a first bonding material. The bonding part is provided on an upper surface of the semiconductor element. The bonding part is electrically connected to an electrode of the switching element other than a gate electrode. The lead is bonded to the bonding part via a second bonding material. The bonding part and the second bonding material are provided in a region including a center part of the upper surface of the semiconductor element.