Semiconductor Wire Bonding via Iodine Protective Film and Argon Plasma
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Solution Overview
Problem
The bonding reliability of semiconductor devices deteriorates due to contamination and improper formation of the conductive layer, leading to weakened bonding strength between the bonding wire and the conductive layer, which can result in failure during resin sealing.
Innovation Solution
A method involving the formation of a protective iodine film on the conductive layer surface, followed by argon plasma cleaning to remove contaminants and ensure a clean surface for wire bonding, preventing contamination and enhancing bonding strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive layer is formed over the pad electrode, then electrical connection is achieved, but contamination occurs on the conductive layer surface leading to deteriorated bonding reliability
Solution Approach 1:
A protective film is formed on the conductive layer surface before subsequent processing steps. This protective film prevents contamination from etching liquids and other sources during the manufacturing process, ensuring the conductive layer remains clean for reliable wire bonding while maintaining the electrical connection function.
2Strength
If the conductive layer surface is cleaned to remove contamination, then bonding strength is improved, but the surface may become damaged or altered
Solution Approach 1:
The protective film is formed in advance to prevent contamination accumulation, eliminating the need for aggressive post-contamination cleaning operations. This preliminary protection maintains surface integrity while ensuring bonding strength through preventive rather than corrective measures.
Solution Approach 2:
The protective film acts as an intermediary layer between the conductive layer surface and contaminating substances. It shields the conductive layer from direct exposure to harmful etching liquids and other contaminants, allowing the surface to remain clean and intact for optimal bonding without requiring damaging cleaning operations.
3Adaptability or versatility
If multiple processing steps are performed on the semiconductor wafer, then device functionality is achieved, but the conductive layer surface becomes contaminated during intermediate steps
Solution Approach 1:
The protective film is formed on the conductive layer surface before subsequent processing steps such as etching and wiring are performed. This allows multiple processing steps to be carried out to achieve device functionality while the protective film prevents contamination during these intermediate steps.
Solution Approach 2:
The protective film serves as an intermediary barrier during multiple processing steps. It allows etching liquids and other processing chemicals to be applied for device fabrication while preventing these substances from contaminating the conductive layer surface, thus enabling versatile processing without contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents contamination and improves the bonding strength between the bonding wire and the conductive layer, reducing the likelihood of bonding wire exfoliation during resin sealing and enhancing overall semiconductor device reliability.
Implementation Method 1
forming a protective film comprised of iodine on the surface of the second conductive layer
Implementation Method 2
irradiating the protective film with argon ions and removing the protective film
Data Source
AI summary
The present invention: makes it possible to improve the reliability of a semiconductor device; and provides a method of manufacturing the semiconductor device comprising the steps of (a) providing a semiconductor wafer having a pad electrode, a first conductive layer comprised of copper, a photoresist film, and a second conductive layer comprised of gold, (b) forming a protective film comprised of iodine on the surface of the second conductive layer, (c) removing the photoresist film, (d) irradiating the protective film with argon ions and removing the protective film, and (e) bringing a part of a bonding wire into contact with the surface of the second conductive layer.