Bonding Structure for Semiconductor Devices
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Solution Overview
Problem
Ionic contamination during the electronic packaging process of semiconductor devices leads to reduced bond pad reliability, causing higher failure rates and performance degradation due to delamination issues.
Innovation Solution
A bonding structure is formed with a conductive material that extends to the upper surface of an insulating layer, electrically coupling the bond pad and providing a strong interfacial bond, while a barrier layer prevents ionic contaminants from reaching the bond pad, enhancing bonding reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional wire bonding process is used to electrically couple the bond pad to external packaging components, then the bonding process is simple and cost-effective, but ionic contaminants can diffuse along interfaces between the bond pad and surrounding dielectric layers, causing reduced adhesion and delamination
Solution Approach 1:
A bonding structure comprising a bonding electrode and a bonding pad is introduced as an intermediary between the bond pad and external packaging components. The bonding electrode is formed over the bond pad through a via hole in the dielectric layer, and the bonding pad is formed over the bonding electrode. This intermediate structure prevents direct exposure of the bond pad to ionic contaminants while maintaining electrical coupling, thereby resolving the contradiction between reliability and complexity.
2Object-affected harmful factors
If the bond pad is directly exposed for bonding, then the bonding process is straightforward, but ionic contaminants can reach the bond pad and cause performance degradation
Solution Approach 1:
The bonding interface is segmented into multiple components: the bond pad, via hole, bonding electrode, and bonding pad structure. This segmentation creates physical barriers that prevent ionic contaminants from reaching the bond pad while maintaining the bonding function. The via hole provides a controlled pathway that isolates the bond pad from environmental contaminants, resolving the contradiction between protection and manufacturing simplicity.
3Reliability
If a barrier layer is added to prevent ionic contaminant diffusion, then bond pad reliability improves, but the manufacturing process becomes more complex
Solution Approach 1:
The bonding structure merges multiple functions into a single integrated component. The bonding electrode and bonding pad are formed as part of the same structure during the packaging process, combining electrical coupling, contaminant barrier, and mechanical support functions. This integration maintains manufacturing efficiency while achieving improved reliability, as the structure is formed in-situ during packaging rather than requiring separate barrier layer deposition steps.
Data Source
AI summary
A semiconductor device is provided that includes a bond pad, an insulating layer, and a bonding structure. The bond pad is in a dielectric layer and the insulating layer is over the bond pad; the insulating layer having an opening over the bond pad formed therein. The bonding structure electrically couples the bond pad in the opening. The bonding structure has a height that at least extends to an upper surface of the insulating layer.