Semiconductor Bonding Layer for Hybrid 3D Integration
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Solution Overview
Problem
The semiconductor industry faces challenges in integrating densely packed electronic components due to reduced minimum feature sizes, which complicates processes and requires innovative methods for bonding semiconductor substrates effectively.
Innovation Solution
The use of a bonding layer, such as a silicon-containing dielectric material, for hybrid or fusion bonding of semiconductor devices, allowing for the formation of a system on chip configuration by bonding semiconductor devices together through a hybrid bonding process that includes the activation of the bonding layer and application of heat and pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature sizes are reduced to improve integration density, then more components can be integrated into a given area, but additional process problems arise that complicate manufacturing
Solution Approach 1:
The patent transitions from planar 2D integration to 3D vertical stacking by bonding multiple semiconductor substrates together. This dimensional change allows continued increase in integration density without further reducing minimum feature sizes, thereby avoiding the process complexity issues associated with smaller features while still achieving higher component density through vertical stacking of multiple device layers
2Strength
If hybrid bonding is used to join semiconductor substrates, then robust bonds with multiple bond types are formed, but the bonding process requires activation of bonding layer and application of heat and pressure
Solution Approach 1:
The patent introduces a bonding layer as an intermediary material between the semiconductor substrates to facilitate hybrid bonding. This bonding layer enables the formation of both metal-to-metal bonds and dielectric-to-dielectric bonds, creating robust connections while managing the complexity of the bonding process through controlled activation and bonding conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of a robust and efficient bond between semiconductor devices, enhancing integration density and improving the manufacturing process by creating a stable hybrid bonded device with multiple bond types, including metal-to-metal and dielectric-to-dielectric bonds.
Implementation Method 1
bonding semiconductor devices together through a hybrid bonding process that includes the activation of the bonding layer and application of heat and pressure
Implementation Method 2
for hybrid or fusion bonding of semiconductor devices
Data Source
AI summary
Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor device.