Double-Layered Bonding Layer for Semiconductor Peeling

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor devices face peeling issues between components and resin molds at high temperatures (200° C. to 250° C.), particularly with silicon carbide semiconductors, where existing adhesive forces are insufficient to prevent peeling.

Innovation Solution

A semiconductor device with a double-layered bonding layer, where the first layer provides a strong adhesive force using organic resins with a loss coefficient tan δ of 0<tan δ≦0.3, and the second layer reduces stress with a tan δ dispersion peak of 1.0≦tan δ<2, ensuring adhesion and stress reduction within the specified temperature range.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a polyamide resin layer is used to increase adhesive force between components and molded resin, then adhesive force is improved, but peeling occurs at temperatures of 200°C or higher due to stress exceeding adhesive force

Engineering Contradiction:
Improveadhesive forceVSAvoidpeeling resistance at high temperature
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The bonding layer is divided into two distinct layers: a first bonding layer (polyamide resin) that provides strong adhesive force to the component, and a second bonding layer (epoxy resin) that provides stress resistance and peeling prevention. This segmentation allows each layer to specialize in one function, resolving the contradiction between adhesive force and high-temperature reliability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention uses a composite structure combining two different resin materials (polyamide and epoxy) in a layered configuration. The polyamide layer provides adhesion while the epoxy layer provides dimensional stability and stress resistance, creating a composite bonding system that overcomes the limitations of single-material bonding layers at high temperatures.

Inventive Principle:
Principle #40Composite materials

2Strength

If adhesive force between component and molded resin is increased, then bonding strength is improved, but stress at high temperature exceeds adhesive force causing peeling

Engineering Contradiction:
Improvebonding strengthVSAvoidthermal stress
Core Design Contradiction:
StrengthVSStress or pressure

Solution Approach 1:

The bonding function is segmented into two layers: the first layer handles adhesion to the component, while the second layer handles stress management and bonding to the molded resin. This segmentation allows the stress-resistant epoxy layer to mitigate thermal stress without compromising the adhesive properties of the polyamide layer.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention changes the material parameters of the bonding layer by selecting resins with specific glass transition temperatures and mechanical properties. The epoxy resin's higher glass transition temperature and dimensional stability allow it to withstand thermal stress better than polyamide alone, resolving the stress-adhesion contradiction.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The double-layered bonding layer effectively suppresses peeling between components and the resin mold, maintaining adhesive force and reducing stress, preventing peeling at high temperatures and ensuring reliability through hot-cold cycle tests.

Implementation Method 1

A loss coefficient tan δ of the first layer is smaller than a loss coefficient tan δ of the second layer within a temperature range of 200° C. to 250° C.

Methodology Applied
Scientific EffectViscoelasticity: Viscoelasticity

Data Source

PatentUS9536802B2Semiconductor device
Publication Date: 2017.01.03 DENSO CORP
  • US9536802B2 patent drawing
  • US9536802B2 patent drawing
  • US9536802B2 patent drawing

AI summary

A semiconductor device includes a semiconductor chip, a resin mold portion sealing a component in which the semiconductor chip is included, and a bonding layer disposed between the resin mold portion and the component. The bonding layer is made of an organic resin that is disposed at an obverse side of the component, and includes a first layer bonded to the component and a second layer bonded to the resin mold portion. A loss coefficient tan δ of the first layer is smaller than a loss coefficient tan δ of the second layer within a temperature range of 200° C. to 250° C.