Semiconductor Bonding Layer Composition to Prevent Shorts and Cracks
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Solution Overview
Problem
Semiconductor devices with solder bonding layers face issues of short circuits and cracking due to increased electrode numbers and thermal stress, which existing technologies have not adequately addressed.
Innovation Solution
A semiconductor device with a bonding layer comprising a conductive metal portion and an insulating resin portion, where the electrodes are individually formed and bonded to a conductive member using a bonding material containing metal particles and resin, which is fired under atmospheric pressure to prevent short circuits and cracking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of electrodes is increased to improve circuit functionality, then the device performance is improved, but the risk of short circuits between electrodes increases due to the bonding layer becoming molten during bonding
Solution Approach 1:
The bonding layer is constructed as a composite material comprising both a metal component (for electrical conductivity and bonding strength) and a resin component (for electrical insulation). This composite structure enables the bonding layer to simultaneously conduct electricity where needed while providing insulation between adjacent electrodes, thereby preventing short circuits even when the number of electrodes is increased.
2Reliability
If solder is used as the bonding layer material to achieve good electrical conductivity, then electrical bonding is improved, but cracks are likely to occur due to thermal stress from heat generated by the semiconductor element
Solution Approach 1:
The bonding layer combines metal particles (providing electrical conductivity) with resin matrix (providing mechanical flexibility and crack resistance). The resin component can accommodate thermal expansion differences and absorb thermal stress, preventing crack formation while the metal particles maintain the necessary electrical conductivity for bonding.
Solution Approach 2:
The invention changes the material parameters of the bonding layer by transitioning from pure solder (high conductivity but brittle under thermal stress) to a composite material with optimized metal-to-resin ratios. This parameter change allows the bonding layer to maintain adequate conductivity while significantly improving resistance to thermal stress-induced cracking.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses cracking in the bonding layer and prevents short circuits while maintaining electrical conductivity, enhancing the reliability and durability of the semiconductor device.
Implementation Method 1
the plurality of electrodes are electrically bonded to the main surface by firing the bonding material under atmospheric pressure after the bonding material is brought into contact with the main surface
Data Source
AI summary
Disclosed herein is a semiconductor device including a conductive member that has a main surface facing in a thickness direction, a semiconductor element that has a plurality of pads facing the main surface, a plurality of electrodes that are individually formed with respect to the plurality of pads and protrude from the plurality of pads toward the main surface, and a bonding layer for electrically bonding the main surface to the plurality of electrodes. The bonding layer includes a first region having conductivity and a second region having electrical insulation. The first region includes a metal portion. At least a part of the second region includes a resin portion.