Semiconductor Device Bonding Layers Thermal Stress
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Solution Overview
Problem
The challenge lies in manufacturing high-performance electronic and photoelectric devices on sapphire growth substrates, which are electrically and thermally insulating, leading to current crowding and inefficient heat emission due to the substrate's poor conductivity, and existing wafer bonding methods face issues with thermal stress and defects during the transfer of single crystal semiconductor thin layers to dissimilar support substrates.
Innovation Solution
A method involving a sandwich structure with a temporary substrate and a support substrate, using functional wafer bonding layers and sacrifice layers to facilitate thermo-compressive bonding and thermo-chemical decomposition for transferring single crystal semiconductor thin layers, minimizing thermal stress and ensuring adhesion, while allowing for the use of dissimilar materials with similar thermal expansion coefficients.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a sapphire growth substrate is used, then the device can be manufactured with good crystal quality, but the electrical and thermal conductivities are poor leading to current crowding and inefficient heat emission
Solution Approach 1:
The device structure is segmented into multiple functional layers: the sapphire growth substrate is separated from the final device structure through a sacrificial layer, allowing the active semiconductor layers to be transferred to a support substrate that provides both mechanical support and thermal management while maintaining the crystal quality benefits of sapphire growth
Solution Approach 2:
A sacrificial layer (e.g., AlN or GaN) is introduced as an intermediary between the sapphire substrate and the semiconductor device layers. This sacrificial layer enables the decoupling of the growth substrate function from the device operation function, allowing heat to be conducted away through the support substrate while the device maintains its crystal structure integrity
2Loss of energy
If a single crystal semiconductor thin layer is transferred to a dissimilar support substrate, then the thermal and electrical conductivity can be improved, but thermal stress and defects occur during the transfer process
Solution Approach 1:
The transfer process utilizes controlled parameter changes including temperature cycling (heating to bonding temperature then cooling), pressure application during bonding, and the use of sacrificial layers that can be selectively removed. These parameter changes enable the single crystal semiconductor thin layer to be transferred to dissimilar support substrates while managing thermal stress and minimizing defects
Solution Approach 2:
The structure employs composite material design with multiple layers having different properties: the sapphire growth substrate, sacrificial layer(s), single crystal semiconductor thin layer, and support substrate are combined to create a composite structure that leverages the advantages of each material while mitigating their individual disadvantages during the transfer process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the reliable transfer of single crystal semiconductor thin layers to support substrates with excellent conductivity, reducing defects and thermal stress, and allows for the production of high-performance electronic and photoelectric devices with improved heat management and reliability.
Implementation Method 1
as illustrated in FIGS. 1A to 1E, when a support formed through a wafer bonding process is used
Implementation Method 2
using functional wafer bonding layers and sacrifice layers to facilitate thermo-compressive bonding and thermo-chemical decomposition for transferring single crystal semiconductor thin layers, minimizing thermal stress
Implementation Method 3
facilitate thermo-compressive bonding and thermo-chemical decomposition for transferring single crystal semiconductor thin layers
Data Source
AI summary
Provided is a semiconductor device. The semiconductor device comprises a support substrate; a bonding layer on the support substrate; and a plurality of semiconductor layers on the bonding layer, wherein the bonding layer includes a first bonding layer between the support substrate and the plurality of semiconductor layers and a second bonding layer between the first bonding layer and the plurality of semiconductor layers, wherein an at least one of the first and second bonding layers includes a multi layers, wherein the first and second bonding layers include a same material from each other, wherein the first and second bonding layers includes a different material from the plurality of semiconductor layers.