Semiconductor Die Bonding With Induction-Heated Metal Rings

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The hybrid bonding technology for semiconductor devices faces challenges in achieving high bonding strength and reliability while avoiding deformation or fracture due to high temperatures, especially when bonding interfaces are heated to 400° C to 450° C, which can damage temperature-sensitive materials, and bonding at low temperatures results in low bonding energy and reliability.

Innovation Solution

The semiconductor device incorporates first and second dies with bonding layers and metal rings surrounding connection structures, allowing these structures to be heated uniformly by an alternating magnetic field generated by an electromagnetic induction heater, while insulating materials remain at a lower temperature to prevent deformation, thus enhancing bonding strength and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If high temperature (400-450°C) is applied to bond metal layers, then bonding strength is improved, but insulating materials may deform or fracture

Engineering Contradiction:
Improvebonding strengthVSAvoiddeformation or fracture of insulating materials
Core Design Contradiction:
StrengthVSObject-affected harmful factors

Solution Approach 1:

The patent divides the heating process into two distinct phases: a first heating phase that heats only the metal layers to bonding temperature, and a second heating phase that heats the entire bonding interface including insulating materials. This segmentation allows selective heating of different components at different times, preventing damage to temperature-sensitive insulating materials while achieving strong metal bonding.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The metal layers are heated to bonding temperature in advance (first heating phase) before the insulating materials are heated. This preliminary action allows the metal layers to reach the required bonding temperature and form strong bonds while the insulating materials remain at lower temperatures, avoiding their deformation or fracture.

Inventive Principle:
Principle #10Preliminary action

2Object-affected harmful factors

If low temperature is used for bonding, then insulating materials are protected from damage, but bonding energy and reliability decrease

Engineering Contradiction:
Improvedamage to insulating materialsVSAvoidbonding reliability
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The bonding process is divided into two sequential heating phases: first heating the metal layers at higher temperature to ensure strong bonding, then heating the insulating materials at lower temperature to complete the bonding process without damaging them. This segmentation resolves the contradiction by applying appropriate temperatures to different materials at different times.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The heating process uses periodic action with two distinct stages: a first heating stage for metal layers and a second heating stage for insulating materials. This periodic heating approach ensures that each material type receives the appropriate temperature treatment at the right time, achieving both high bonding reliability and protection of insulating materials.

Inventive Principle:
Principle #19Periodic action

3Ease of manufacture

If uniform heating is applied to the entire bonding interface, then bonding process is simplified, but temperature-sensitive materials may be damaged

Engineering Contradiction:
Improvebonding process simplicityVSAvoiddamage to temperature-sensitive materials
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The heating process is segmented into two phases with different heating ranges: first heating only the metal layers, then heating the entire bonding interface. This segmented approach maintains relative simplicity in the bonding process while preventing damage to temperature-sensitive insulating materials through controlled selective heating.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for high-temperature bonding of metal layers with uniform heating of connection structures, maintaining low temperatures in insulating materials to prevent deformation and ensuring strong, reliable bonds between semiconductor devices.

Implementation Method 1

heated by an alternating magnetic field generated by an electromagnetic induction heater

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 2

heated by an alternating magnetic field generated by an electromagnetic induction heater

Methodology Applied
Scientific EffectInduction heating: Induction Heating

Implementation Method 3

insulating materials remain at a lower temperature to prevent deformation

Methodology Applied
Scientific EffectThermal insulation: Thermal Insulation

Data Source

PatentUS20240387408A1Semiconductor devices, fabrication methods of semiconductor devices and semiconductor apparatus
Publication Date: 2024.11.21 YANGTZE MEMORY TECH CO LTD
  • US20240387408A1 patent drawing
  • US20240387408A1 patent drawing
  • US20240387408A1 patent drawing

AI summary

Examples of the present application disclose semiconductor devices, fabrication methods of semiconductor devices, and semiconductor apparatus. In one example, the semiconductor device includes a first die, the first die includes a first bonding layer, wherein the first bonding layer includes a first connection structure and a first metal ring, the first metal ring disposed around the first connection structure.