Semiconductor Bonding Structure With Nanowire Top Contacts
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Solution Overview
Problem
Existing methods for forming top contacts between semiconductor elements and substrates, such as wire bonding, face limitations including limited current carrying capacity, high electrical resistance due to small contact areas, and susceptibility to failure, which complicates the manufacturing process and reduces the reliability of electronic components.
Innovation Solution
A multilayer connecting element comprising a first electrically conductive layer, an electrically insulating layer, and a second electrically conductive layer, where the semiconductor element is connected to the substrate via nanowires that bridge across an interruption in the first conductive layer, allowing for a larger contact area and reduced inductance, thereby enhancing electrical properties and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wire bonding is used to connect top contacts, then the connection can be formed with simple process, but the contact area becomes small resulting in high electrical resistance
Solution Approach 1:
The connecting element is divided into multiple conductive layers (first electrically conductive layer, second electrically conductive layer) separated by an insulating layer. This segmentation allows the formation of multiple parallel conduction paths through vias and nanowires, effectively increasing the total contact area while maintaining a compact structure that is easy to manufacture.
Solution Approach 2:
The patent transitions from a single-plane wire bond connection to a three-dimensional multilayer structure. The conductive paths extend through the insulating layer via vias and nanowires, utilizing the vertical dimension to create additional contact areas without increasing the horizontal footprint, thus resolving the contradiction between contact area and manufacturing complexity.
2Ease of manufacture
If wire bonding is used to connect top contacts, then the connection can be formed with simple process, but the current carrying capacity becomes limited
Solution Approach 1:
The current path is segmented into multiple parallel conductors (first electrically conductive layer, second electrically conductive layer, vias, and nanowires). By distributing the current across these multiple segmented paths, the total current carrying capacity is significantly increased while each individual conductor remains simple to manufacture.
Solution Approach 2:
Multiple conductive elements (first conductive layer, second conductive layer, vias, nanowires) are merged into a single integrated connecting element structure. This combination creates a composite conductor with high current carrying capacity that can be applied as a single unit to the substrate and semiconductor element.
3Ease of manufacture
If wire bonding is used to connect top contacts, then the connection can be formed with simple process, but inductance is created due to loop routing
Solution Approach 1:
The patent eliminates the loop structure by transitioning to a planar multilayer configuration. The conductive paths are arranged in adjacent layers and connected through vertical vias and nanowires, creating a compact layout that minimizes the loop area and thus reduces inductance while maintaining manufacturing simplicity.
4Ease of manufacture
If wire bonding is used to connect top contacts, then the connection can be formed individually, but the process becomes complex
Solution Approach 1:
Multiple individual wire bond operations are merged into a single connecting element application process. The connecting element with its integrated multilayer structure and pre-formed conductive paths is applied as one unit, simultaneously creating all necessary electrical connections without requiring separate individual bonding steps.
5Ease of manufacture
If wire bonding is used to connect top contacts, then the connection can be formed, but the contact area is smaller than the substrate contact area
Solution Approach 1:
The patent utilizes the vertical dimension with multiple conductive layers to increase the effective contact area. The first and second electrically conductive layers, connected through vias and nanowires, provide multiple contact interfaces within the same horizontal footprint, effectively increasing the total contact area without requiring a larger substrate contact area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides a long-lasting, low-resistance connection with improved electrical properties and reduced inductance, enabling increased working frequency and thermal conduction, while simplifying the manufacturing process and enhancing the longevity of electronic components.
Implementation Method 1
the top contact and the first contact are connected to the first electrically conductive layer via a respective plurality of nanowires
Implementation Method 2
the first electrically conductive layer is electrically connected to the second electrically conductive layer on both sides of the interruption through the electrically insulating layer
Implementation Method 3
enabling increased working frequency and thermal conduction
Data Source
Figure 1
AI summary
Arrangement (1) comprising: - a substrate (2) with an electrically insulating surface (15), - a semiconductor element (3) directly or indirectly resting on the surface (15) of the substrate (2), - a connecting element (4) with a first electrically conductive layer (5), an electrically insulating layer (6) and a second electrically conductive layer (7) which are in contact with each other in the specified order, wherein the semiconductor element (3) is connected to the substrate (2) by the connecting element (4) via at least one electrically conductive connection (9).