Semiconductor Package Bonding Pad Structure for Heat Dissipation
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Solution Overview
Problem
Semiconductor packages with system-in-package (SIP) technology face limitations in heat dissipation due to deformation of electrical die sorting (EDS) test pads, which affects their performance and reliability.
Innovation Solution
A semiconductor package design that includes a base structure with a dummy pad and a connection pad, a semiconductor chip with a test pad and input/output pad, and bonding pad structures with specific crystal orientations to enhance heat dissipation and hybrid bonding reliability, using a bonding insulating layer and seed layers to stabilize the bonding pads and improve thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If EDS test is performed on the test pad, then electrical testing can be completed, but the test pad surface becomes deformed and heat dissipation is reduced
Solution Approach 1:
The test pad structure is segmented into multiple functional layers: the original test pad, a first bonding insulating layer, a first bonding pad structure with contact portion, and a second bonding insulating layer. This segmentation allows the test pad to serve both testing and heat dissipation functions simultaneously by separating the testing interface from the bonding interface.
Solution Approach 2:
The first bonding insulating layer and first bonding pad structure act as intermediary elements between the deformed test pad surface and the dummy pad. The contact portion penetrates the first bonding insulating layer to electrically connect with the test pad while providing a flat bonding surface, thus mediating between the deformed test pad and the bonding requirement.
2Ease of manufacture
If the test pad surface is used for bonding, then bonding can be performed, but surface deformation from EDS test reduces bonding quality
Solution Approach 1:
The first bonding insulating layer is formed in advance to cover the test pad before bonding occurs. This preliminary action protects the deformed test pad surface and provides a foundation for creating a flat bonding interface through the first bonding pad structure, ensuring both ease of manufacture and bonding precision.
Solution Approach 2:
The first bonding pad structure extends in the vertical dimension by penetrating the first bonding insulating layer. This dimensional approach allows the bonding surface to be elevated above the deformed test pad surface, achieving flatness and bonding quality without being constrained by the original test pad surface topology.
3Temperature
If a simple test pad structure is used, then manufacturing is simpler, but heat dissipation and bonding reliability are insufficient
Solution Approach 1:
The test pad structure is designed with multi-functionality: the test pad provides both electrical testing capability and heat dissipation path; the first bonding pad structure provides both electrical connection and mechanical bonding support; the insulating layers provide both electrical isolation and structural support. This universality allows enhanced heat dissipation and bonding reliability without proportionally increasing complexity.
Solution Approach 2:
The test pad structure employs composite material organization with multiple layers having different functional properties: conductive test pad, insulating first bonding insulating layer, conductive first bonding pad structure with mixed materials (copper, nickel, tungsten), and insulating second bonding insulating layer. This composite structure optimizes heat dissipation pathways while maintaining electrical functionality and bonding reliability.
Data Source
AI summary
A semiconductor package includes a semiconductor chip including a second bonding insulating layer surrounding at least a portion of each of a first bonding pad structure and a second bonding pad structure, in which the first bonding pad structure includes a first contact portion, a first bonding pad, and a first seed layer disposed between the first bonding pad and the first contact portion and extending in a first direction, the second bonding pad structure includes a second contact portion, a second bonding pad, and a second seed layer disposed between the second bonding pad and the second contact portion and extending in the first direction, and the second bonding insulating layer is in contact with a side surface of each of the first and second seed layers and the first and second bonding pads.