Semiconductor Element Bonding Pad Placement for Schottky Diode Protection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor elements used in inverter circuits face challenges with high-speed switching due to limitations in response speed, leading to increased switching losses and potential breakdowns from current concentration on schottky electrodes, as well as deterioration of insulating layers during wire bonding.
Innovation Solution
A semiconductor element design featuring a field effect transistor and schottky diode integrated on a single chip, with a schottky electrode disposed on the drift region to form a schottky junction, and a large area schottky electrode to absorb minority carriers, reducing current concentration and enhancing withstand voltage, while the diode cell is positioned below bonding pads to prevent ultrasound-induced damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional semiconductor elements (IGBT, MOSFET) are used for switching, then the device can operate in inverter circuits, but the response speed is limited causing increased switching losses
Solution Approach 1:
The patent uses wide band-gap semiconductor material (such as SiC or GaN) instead of conventional silicon, fundamentally changing the material parameter to achieve higher breakdown voltage and faster carrier response, thereby reducing switching losses while maintaining high-speed operation
Solution Approach 2:
The invention integrates a schottky diode structure with the field effect transistor on the same chip, creating a composite device that combines the high-speed switching capability of MOSFET with the fast reverse recovery characteristics of schottky diodes, effectively reducing overall switching losses
2Productivity
If switching speed is increased to reduce switching losses, then energy efficiency improves, but current concentration on schottky electrodes causes breakdown
Solution Approach 1:
The patent divides the schottky electrode into multiple segments or distributes it over a larger area, preventing current concentration at single points and enabling high-speed switching without breakdown
Solution Approach 2:
The invention optimizes the local properties of the schottky electrode region, such as adjusting the metal layer thickness, material composition, or contact area distribution, to handle high current densities during fast switching while preventing breakdown
3Ease of manufacture
If wire bonding is performed on the semiconductor element, then electrical connections are established, but ultrasound causes deterioration of the insulating layer
Solution Approach 1:
The patent reinforces the insulating layer structure before wire bonding by adding protective layers, increasing thickness in critical areas, or using materials with higher mechanical strength to withstand the ultrasound vibration during bonding without deterioration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high-speed switching with reduced energy losses and improved resistance to counter electromotive voltage, while maintaining the integrity of the insulating layer during wire bonding, thereby enhancing the semiconductor element's reliability and efficiency.
Implementation Method 1
a schottky electrode disposed on an upper surface of the drift region so as to form a schottky junction with the upper surface of the drift region
Data Source
AI summary
In a semiconductor element (20) including a field effect transistor (90), a schottky electrode (9a) and a plurality of bonding pads (12S, 12G), at least one of the plurality of bonding pads (12S, 12G) is disposed so as to be located above the schottky electrode (9a).