Semiconductor Bonding Plane Insulating Layers Metal Diffusion
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Solution Overview
Problem
Existing semiconductor devices face challenges in enhancing the bonding strength between circuit components and preventing metal diffusion, which affects the reliability of the device.
Innovation Solution
The use of insulating layers composed of silicon oxide, silicon carbide, and silicon nitride, with a specific atomic composition that includes oxygen, carbon, and nitrogen atoms bonded to silicon, to form a strong bonding plane while preventing metal diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diffusion preventing film (silicon nitride, silicon oxycarbide, or silicon oxycarbonitride) is used to prevent metal diffusion, then metal diffusion from wiring layer to insulating layer is prevented, but bonding strength at the bonding surface is insufficient
Solution Approach 1:
The patent uses a composite insulating layer structure combining silicon oxide layer and silicon nitride layer. The silicon oxide layer provides strong O-Si-O bonding for high bonding strength, while the silicon nitride layer acts as a diffusion barrier. This composite structure resolves the contradiction by integrating materials with complementary properties - one optimized for bonding strength and the other for diffusion prevention.
Solution Approach 2:
The insulating layer is segmented into multiple functional layers: a silicon oxide layer for bonding surface formation and a silicon nitride layer for diffusion prevention. By dividing the insulating layer into separate segments with distinct functions, the patent achieves both high bonding strength and effective metal diffusion prevention without compromising either property.
2Reliability
If bonding surfaces are activated and components are adhered together to achieve electrical connection, then electrical connection between circuit components is established, but bonding strength remains insufficient for reliable operation
Solution Approach 1:
The patent employs a composite insulating layer structure where the silicon oxide layer forms a strong bonding surface for reliable adhesion, while the silicon nitride layer provides diffusion barrier functionality. This composite approach ensures both strong mechanical bonding and reliable electrical connection, resolving the contradiction between bonding strength and connection reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases the bonding strength between circuit components and prevents metal diffusion, thereby enhancing the reliability and durability of the semiconductor device.
Implementation Method 1
bonding between silicon atoms and oxygen atoms (O—Si—O bonding) at the bonding surfaces
Implementation Method 2
diffusion preventing film for preventing metal diffusion
Data Source
AI summary
A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.