Low-Temperature Semiconductor Package Bonding via Chemical Plating
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Solution Overview
Problem
Conventional soldering processes for connecting semiconductor components require high temperatures, which can negatively impact chip performance and hinder the miniaturization and speed enhancement of semiconductor packages.
Innovation Solution
A low-temperature bonding process using a metal member formed through chemical plating, allowing for stable electrical connections at temperatures below 200°C, reducing the bonding temperature from 250°C and preventing performance degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional soldering process is used to connect semiconductor components, then stable electrical connection is achieved, but high temperature (250°C or higher) degrades chip performance
Solution Approach 1:
The patent changes the bonding temperature parameter from conventional high temperature (250°C or higher) to low temperature (below 200°C). This is achieved by using a low-temperature bonding process with specific bonding agents that enable reliable electrical connections at reduced temperatures, thereby preventing chip performance degradation while maintaining connection stability.
Solution Approach 2:
The patent introduces a bonding agent as an intermediary substance between the first substrate and second substrate. This bonding agent enables electrical connection at low temperatures by facilitating charge transfer and maintaining conductive pathways without requiring high thermal energy, thus resolving the contradiction between connection reliability and temperature control.
2Reliability
If high temperature soldering is used to ensure stable connection, then electrical reliability is improved, but package size cannot be reduced and computation speed is limited
Solution Approach 1:
By changing the bonding temperature parameter to below 200°C, the patent enables the use of low-temperature bonding agents and processes that allow for more compact package designs. The reduced thermal requirements permit smaller interconnection structures and closer component placement, thereby reducing overall package volume while maintaining connection reliability.
3Reliability
If conventional high temperature bonding process is used, then stable electrical connection is achieved, but computation speed improvement is hindered
Solution Approach 1:
The patent changes the bonding temperature to below 200°C, which prevents thermal damage to semiconductor components and maintains their high-speed operational characteristics. The low-temperature bonding process preserves the electrical properties and switching speeds of the chips, thereby enabling computation speed improvements while ensuring stable electrical connections through the bonding agent.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The low-temperature bonding process ensures reliable electrical connections without degrading semiconductor package performance, enabling smaller package sizes and faster computation speeds while avoiding high-temperature processing issues.
Implementation Method 1
a metal member is formed through a chemical plating process
Implementation Method 2
the at least one first contact and the at least one second contact partially physically contact with each other
Implementation Method 3
the at least one first contact and the at least one second contact partially physically contact with each other or partially chemically interface reactive contact with each other
Implementation Method 4
plating to form a metal member to wrap around the at least one first contact and the at least one second contact
Data Source
AI summary
A package structure and a method for connecting components are provided, in which the package includes a first substrate including a first wiring and at least one first contact connecting to the first wiring; a second substrate including a second wiring and at least one second contact connecting to the second wiring, the at least one first contact and the at least one second contact partially physically contacting with each other or partially chemically interface reactive contacting with each other; and at least one third contact surrounding the at least one first contact and the at least one second contact. The first substrate and the second substrate are electrically connected with each other at least through the at least one first contact and the at least one second contact.