Semiconductor Bonding Structure for Stress-Relieved Insulating Components
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Solution Overview
Problem
Existing semiconductor devices face issues with stress applied to insulating components due to deformation, leading to dielectric breakdown and reduced reliability, especially when heat dissipation blocks are not perfectly aligned, causing deformation and malfunction.
Innovation Solution
The semiconductor device incorporates an insulating layer with adjustable bonding materials made of the same material, reducing stress on the insulating component by adjusting the thickness of these materials, thereby enhancing reliability and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the height of the heat dissipation block is infinitesimally different from the total height of the semiconductor element, solder, the heat spreader, and the lead electrode, then a component relatively prone to deformation is deformed, but maintaining perfect alignment is difficult in manufacturing
Solution Approach 1:
The patent introduces a thickness adjustment layer (bonding material) between the heat dissipation block and the lead electrode, allowing independent adjustment of the heat dissipation block's position. This changes the parameter of vertical positioning, enabling perfect alignment between components of different heights without requiring infinitesimal manufacturing precision.
Solution Approach 2:
The bonding material serves as an intermediary element between the heat dissipation block and the lead electrode. It compensates for height differences and enables reliable bonding even when the heights of components are not perfectly matched, thereby preventing deformation while maintaining manufacturing feasibility.
2Ease of manufacture
If multiple different bonding materials are used for bonding different components, then specific bonding requirements for each component can be met, but the heating times required for bonding increase and heat deterioration occurs
Solution Approach 1:
The patent uses the same bonding material (solder) for bonding both the semiconductor element and the insulating component to the lead electrode. This homogenizes the bonding process, allowing both components to be bonded simultaneously in a single heating step, thereby reducing total heating time and preventing heat deterioration while still meeting bonding requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces stress on insulating components, prevents heat deterioration, and enhances the reliability and longevity of the semiconductor device by efficiently dissipating heat through materials with high thermal conductivity.
Implementation Method 1
Since the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of the same material, the heating times required for the bonding can be reduced. Thus, the heat deterioration of the components of the semiconductor device can be prevented.
Implementation Method 2
The semiconductor element is bonded to an upper surface of the circuit pattern through a first bonding material. The insulating component is bonded to the upper surface of the circuit pattern through a second bonding material. An upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material. An upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material.
Data Source
AI summary
A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.