Semiconductor Module Bonding Structure for Pressure Stress Suppression
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Solution Overview
Problem
Conventional semiconductor devices experience stress concentration and damage to internal structures due to pressure applied from above during bonding to a module substrate, leading to fluctuations in device characteristics.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with a cell portion and terminal portion, where an interlayer film and a protective film are strategically positioned to distribute stress, with the protective film not directly above the trench gates or oxide film, reducing stress transmission and maintaining device integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the protective film is positioned on top of the semiconductor device structure, then the terminal portion is protected, but stress concentrates on the protective film causing damage to internal structures
Solution Approach 1:
The patent repositions the protective film from the top surface to the bottom surface of the semiconductor device, changing its spatial dimension. This dimensional change allows the protective film to serve as a stress-distributing base layer during pressure bonding, preventing stress concentration while maintaining terminal portion protection through alternative structural design.
Solution Approach 2:
The patent introduces an interlayer film as an intermediary structure between the protective film and the electrode. This intermediary layer distributes the stress applied during pressure bonding, preventing direct stress transmission to the protective film and internal structures, thereby resolving the stress concentration issue while maintaining protective functionality.
2Ease of manufacture
If pressure is applied from above during bonding, then the semiconductor device is bonded to the module substrate, but stress damages internal structures under the protective film
Solution Approach 1:
The patent inverts the conventional bonding approach by applying pressure from the bottom side where the protective film is located, rather than from the top. This inversion allows the protective film to distribute stress uniformly across the device structure during bonding, preventing damage to internal structures while achieving reliable bonding to the module substrate.
Solution Approach 2:
The interlayer film serves as a stress-distributing intermediary between the electrode and the protective film during pressure bonding. This intermediary structure prevents direct stress transmission to sensitive internal structures, enabling successful bonding without compromising structural integrity.
Data Source
AI summary
An object of the present disclosure is to provide a semiconductor device and a semiconductor module in which fluctuations in the characteristics caused by pressure from above are suppressed. A semiconductor device according to the present disclosure includes a semiconductor substrate having a cell portion provided with a semiconductor element and a terminal portion provided around the cell portion in plan view, a first electrode provided on the semiconductor substrate, a second electrode provided at a position corresponding to the cell portion on the first electrode, an interlayer film provided in a position corresponding to the cell portion and the terminal portion on the first electrode, and a protective film provided in a position corresponding to the cell portion and the terminal portion on the interlayer film.