Semiconductor Bonding Structure Without Solder Triple Points

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Solution Overview

Problem

Conventional semiconductor modules face challenges in ensuring reliable bonding between semiconductor chips and wiring members, particularly due to stress concentrations at triple points formed by solder, plated layers, and protective films.

Innovation Solution

The semiconductor module design incorporates a configuration where the plated layer and solder layer are positioned away from the protective film, eliminating the formation of triple points and thereby reducing stress concentrations. Additionally, the use of a filler material between the plated layer and the protective film can further mitigate stress concentrations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the plated layer and solder layer are positioned close to or overlapping with the protective film, then the bonding structure is more compact and easier to manufacture, but stress concentrations occur at triple points forming between solder, plated layer, and protective film, reducing bonding reliability

Engineering Contradiction:
Improvebonding reliabilityVSAvoidlayer arrangement complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The invention extracts the problematic triple point configuration by positioning the plated layer and solder layer away from the protective film. Specifically, the plated layer is arranged on the wiring member surface while the protective film covers the semiconductor chip surface, and the solder layer bonds these two layers without forming intersection points with the protective film. This separation eliminates the stress concentration zones that would otherwise form at triple points, thereby improving bonding reliability without significantly complicating the manufacturing process.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If a filler material is added between the plated layer and protective film to mitigate stress concentrations, then bonding reliability improves, but the device structure becomes more complex and manufacturing steps increase

Engineering Contradiction:
Improvebonding reliabilityVSAvoidmanufacturing ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The invention converts the potential harm of stress concentrations at triple points into a benefit by deliberately designing a structure where no triple points form. By arranging the plated layer and solder layer to be spatially separated from the protective film, the design eliminates the source of stress concentrations rather than attempting to compensate for them with filler materials. This approach maintains manufacturing simplicity while achieving improved reliability through fundamental structural redesign.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively prevents the formation of triple points, thereby reducing stress concentrations and enhancing the reliability of the bonding between semiconductor chips and wiring members, leading to improved performance and durability of the semiconductor module.

Implementation Method 1

a solder layer 32 is provided between the semiconductor chip 40 and the wiring member 60, and connects the semiconductor chip 40 and the wiring member 60 mechanically and electrically

Methodology Applied
Scientific EffectSoldering: Soldering

Implementation Method 2

a plated layer 36 is provided above the metal electrode 52 of the semiconductor chip 40

Methodology Applied
Scientific EffectElectroplating: Electroplating

Data Source

PatentUS12334409B2Semiconductor module
Publication Date: 2025.06.17 FUJI ELECTRIC CO LTD
  • US12334409B2 patent drawing
  • US12334409B2 patent drawing
  • US12334409B2 patent drawing

AI summary

Provided is a semiconductor module, including: a semiconductor chip including a semiconductor substrate and a metal electrode provided above the semiconductor substrate; a protective film provided above the metal electrode; a plated layer provided above the metal electrode, having at least a part being in a height identical to the protective film; a solder layer provided above the plated layer; and a lead frame provided above the solder layer, wherein the plated layer is provided in a range not in contact with the protective film.