Semiconductor Bonding Layers With Low-κ Adsorption for Void Prevention
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Solution Overview
Problem
Voids often occur between bonding layers in semiconductor devices, leading to improper bonding and reduced bonding strength due to the presence of water molecules and gases, which existing technologies have not effectively addressed.
Innovation Solution
Incorporating a low-κ dielectric material adsorption layer with a lower density than the bonding layer, allowing water molecules and gases to penetrate and be absorbed, thereby improving the bonding strength by reducing void formation between the bonding layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If bonding layers are bonded directly to substrates, then the manufacturing process is simple, but voids occur between bonding layers leading to reduced bonding strength
Solution Approach 1:
The patent divides the bonding interface into multiple functional layers: a bonding layer for adhesion, an adsorption layer for moisture/gas absorption, and an insulating interlayer for electrical isolation. This segmentation allows each layer to perform its specific function optimally, preventing void formation while maintaining manufacturing feasibility.
Solution Approach 2:
The adsorption layer acts as an intermediary between the bonding layer and the insulating interlayer. It specifically addresses the void formation problem by absorbing water molecules and gases that would otherwise create defects at the bonding interface, thereby improving bonding strength without complicating the overall manufacturing process.
2Strength
If a dense bonding layer is used, then structural integrity is good, but water molecules and gases cannot be absorbed leading to void formation
Solution Approach 1:
The patent applies local quality by creating a bonding layer with specifically controlled density and composition (SiO2 content of 20-80 at%) that provides both structural integrity and appropriate porosity for moisture absorption. The adsorption layer is then added with specific material properties (low-κ dielectric material) tailored for gas and water molecule absorption at the critical bonding interface location.
Solution Approach 2:
The bonding layer is formulated as a composite material containing SiO2 particles in a matrix, creating a structure that combines the mechanical strength of the matrix with the porous structure of SiO2 for moisture absorption. This composite approach allows simultaneous achievement of structural integrity and reliability through controlled material composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of low-κ dielectric material adsorption layers enhances the bonding strength between semiconductor device layers by absorbing water and gases, preventing void formation and improving the overall bonding characteristics.
Implementation Method 1
an adsorption layer including a low-κ dielectric material may be further formed between an insulating interlayer and a bonding layer. Since the adsorption layer may have a lower density than the bonding layer, water molecules formed on a surface of the bonding layer may be penetrated into the adsorption layer, so that bonding strength of the bonding layer may be improved.
Data Source
AI summary
A semiconductor device includes a first adsorption layer, a first bonding layer, a second bonding layer, and a second adsorption layer stacked on a first substrate, and a conductive pattern structure penetrating through the first adsorption layer, the first bonding layer, the second bonding layer and the second adsorption layer. The first and second bonding layers are in contact with each other, and each of the first and second adsorption layers includes a low-κ dielectric material.