Semiconductor Device Bonding Wire Deterioration Detection
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Solution Overview
Problem
Semiconductor devices face challenges in accurately detecting bonding wire deterioration due to small changes in resistance, leading to potential disconnection and device failure, especially when the surface electrode is formed as a single pad, making it difficult to detect subtle changes in combined resistance.
Innovation Solution
The semiconductor device incorporates a controller that detects potential differences between multiple electrode pads and a resistor, allowing for increased accuracy in detecting bonding wire deterioration by altering current distribution and sheet resistance, thereby enhancing detection sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a single electrode pad is used for the surface electrode, then the sheet resistance is negligibly small, but the detection accuracy of bonding wire deterioration becomes insufficient
Solution Approach 1:
The surface electrode is divided into multiple electrode pads (first electrode pad, second electrode pad, third electrode pad) instead of using a single electrode pad. This segmentation allows the potential difference measurement to detect bonding wire deterioration more accurately by comparing potentials across multiple points, while the electrode pads remain integrated on the same semiconductor element surface.
2Measurement precision
If multiple bonding wires are used to connect the surface electrode and electrode metal plate, then the current carrying capacity is sufficient, but the changes in combined resistance are too small to detect
Solution Approach 1:
The bonding wires are segmented into multiple groups, with each group connecting to a different electrode pad. The first bonding wires connect the first electrode pad to the electrode metal plate, the second bonding wires connect the second electrode pad, and the third bonding wires connect the third electrode pad. This segmentation allows individual group monitoring through potential difference measurements between different electrode pads.
Solution Approach 2:
The multiple electrode pads serve as intermediaries between the bonding wires and the measurement system. By measuring potential differences between different electrode pads (e.g., first electrode pad and second electrode pad), the system can detect changes in the resistance of specific bonding wire groups without directly measuring the small resistance changes in the bonding wires themselves.
3Power
If the semiconductor device is operated at high power, then the switching performance is good, but thermal stress causes bonding wire deterioration
Solution Approach 1:
The controller continuously measures the potential difference between electrode pads and compares it against reference values to detect bonding wire deterioration. When deterioration is detected through the potential difference changes, the controller can take corrective actions such as reducing power, alerting operators, or shutting down the device to prevent complete failure, thus providing feedback-based reliability protection during high-power operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach facilitates more accurate detection of bonding wire deterioration, reducing the risk of device failure by amplifying the potential difference changes, thus improving the overall reliability of semiconductor device monitoring.
Implementation Method 1
the controller is configured to detect deterioration of the semiconductor device when a potential difference between the first metal pattern and the second metal pattern is above a first threshold
Implementation Method 2
The resistor is connected between the first electrode pad and the second electrode pad. The plurality of bonding wires include a first bonding wire and a second bonding wire. The first bonding wire connects the first electrode pad and the second metal pattern. The second bonding wire connects the second electrode pad and the second metal pattern.
Data Source
AI summary
An increased accuracy in detecting deterioration of a semiconductor device can be achieved. A first metal pattern and a second metal pattern are connected to a controller. A bonding wire connects the first metal pattern and an emitter electrode. A linear conductor is connected between a first electrode pad and a second electrode pad. First bonding wires connect the first electrode pad and the second metal pattern. Second bonding wires connect the second electrode pad and the second metal pattern. The controller detects the deterioration of the semiconductor device when a potential difference between the first metal pattern and the second metal pattern is above a threshold.