Semiconductor Boundary Region Withstand Voltage
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Solution Overview
Problem
The boundary region between the active and current detection regions in semiconductor devices experiences a decrease in withstand voltage, which affects the overall performance of the device.
Innovation Solution
Incorporating a dummy trench gate structure and an insulation layer with a thick film portion in the boundary region to enhance avalanche resistance and dielectric breakdown resistance, while maintaining a balanced structure to prevent excessive thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a boundary region is formed between active region and current detection region, then current detection function is enabled, but withstand voltage decreases at the boundary region
Solution Approach 1:
A dummy trench gate structure is introduced as an intermediary element in the boundary region between the active region and current detection region. This dummy trench gate does not extend to the semiconductor substrate surface and serves as a mediator to reduce electric field concentration, thereby preventing breakdown and improving withstand voltage at the boundary region without requiring complex structural modifications
Solution Approach 2:
The invention changes the physical parameters of the boundary region by creating a dummy trench gate structure with specific depth and width parameters. The trench gate depth is controlled to be less than the body region depth, and the trench width is optimized to achieve the desired electric field distribution. By adjusting these parameters, the electric field concentration is reduced while maintaining the boundary region's functional integrity
2Reliability
If dummy trench gate structure is added in boundary region, then dielectric breakdown resistance increases, but device complexity increases
Solution Approach 1:
The dummy trench gate structure is essentially a simplified copy or replica of the main trench gate structure, but with modified parameters (shallower depth, different electrical connection). Instead of designing a completely new complex structure, the invention uses a copied version of the existing trench gate concept, which reduces design complexity while achieving the desired effect of reducing electric field concentration and preventing dielectric breakdown
Solution Approach 2:
The gate structure is segmented into functional portions: the dummy trench gate structure in the boundary region is separated from the main trench gate in the active region. This segmentation allows the dummy portion to be optimized specifically for electric field management without affecting the main switching function, thereby improving dielectric breakdown resistance while keeping the overall device structure manageable through modular design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively restrains the decrease in withstand voltage at the boundary region, improving the semiconductor device's performance by relaxing electric field concentration and increasing dielectric breakdown resistance.
Implementation Method 1
relaxing electric field concentration
Implementation Method 2
increasing dielectric breakdown resistance
Data Source
AI summary
A semiconductor device includes a semiconductor layer of first-conductivity-type that has a main surface and that includes an active region set at the main surface, a current detection region set at the main surface away from the active region, and a boundary region set in a region between the active region and the current detection region at the main surface, a first body region of second-conductivity-type formed in a surface layer portion of the main surface at the active region, a first trench gate structure formed in the main surface at the active region, a second body region of second-conductivity-type formed in the surface layer portion of the main surface at the current detection region, a second trench gate structure formed in the main surface at the current detection region, a well region of second-conductivity-type formed in the surface layer portion of the main surface at the boundary region, and a dummy trench gate structure formed in an electrically floating state in the main surface at the boundary region.