Semiconductor Device Bowing Region Insulating Layer
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Solution Overview
Problem
In high-aspect-ratio memory holes of three-dimensional semiconductor devices, the 'bowing' phenomenon leads to increased resistance in electrode layers due to larger inner diameters, which is not effectively addressed by existing technologies.
Innovation Solution
The semiconductor device incorporates a stacked body with multiple insulating layers and columnar portions, where a second insulating layer is placed in the 'bowing region' to facilitate the replacement of sacrificial layers with conductive electrode layers, reducing resistance by ensuring proper filling and contact within the memory holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacks of the stacked body is increased for higher integration, then the integration density is improved, but the aspect ratio of the memory hole becomes high causing pronounced 'bowing' and increased resistance
Solution Approach 1:
The patent introduces a second insulating layer that segments the memory hole into multiple regions along its length. This segmentation allows the conductive body to be replaced more effectively in the bowing region by creating distinct zones that facilitate controlled material removal and replacement, thereby reducing resistance while maintaining high integration density
Solution Approach 2:
The second insulating layer is specifically positioned in the bowing region where the inner diameter is largest, creating a local structural modification. This local quality change addresses the resistance problem specifically in the critical bowing region without affecting other areas of the memory hole, enabling targeted resistance reduction while preserving the overall high-aspect-ratio structure needed for high integration
2Ease of manufacture
If the inner diameter of the memory hole increases due to bowing, then the manufacturing process becomes easier, but the resistance of the electrode layers increases
Solution Approach 1:
The second insulating layer creates a local structural feature in the bowing region where the inner diameter is naturally largest. This local modification enables better control over the replacement process of sacrificial layers with conductive bodies, ensuring proper filling in the critical region where resistance would otherwise increase, thus converting the easily-formed large-diameter region into a low-resistance pathway
Solution Approach 2:
The second insulating layer acts as an intermediary structure that facilitates the replacement of sacrificial layers with conductive bodies. By providing a distinct interface and structural guide in the bowing region, it enables more effective material replacement and ensures proper contact and filling, thereby reducing resistance despite the larger inner diameter
Data Source
AI summary
A semiconductor device includes a stacked body 100, first insulating layers 45, a second insulating layer 46 and columnar portions CL. The stacked body 100 includes electrode layers 41 stacked with an insulating body interposed along a Z-direction. The first insulating layers 45 extend in an X-direction and are provided in the stacked body 100 from an upper end thereof to a lower end thereof. The second insulating layer extends in the X-direction and is provided in the stacked body 100 from the upper end to partway through the stacked body 100 between one of the first insulating layers 45 and another one of the first insulating layers 45. The columnar portion CL has a bowed configuration. The second insulating layer 46 is provided in a region B including a location of a maximum inner diameter Dm of the columnar portion CL.