Semiconductor Branch Structure With Staggered Isolation Interfaces
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to necking phenomenon and CD variations in semiconductor branch portions, resulting in curved and expanded interfaces between isolation structures and semiconductor bar portions, which reduces yield and reliability.
Innovation Solution
A semiconductor structure is designed with staggered interfaces between isolation structures and semiconductor bar portions by forming branch portions with a specific distance relationship, allowing for flat interfaces and preventing fractures during the SADP process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the linewidth and line spacing of semiconductor branch portions are reduced to increase device density, then the integration of semiconductor structures is improved, but necking phenomenon and CD variations occur leading to fractures and reduced reliability
Solution Approach 1:
The patent applies asymmetry by designing isolation structures with non-uniform widths - wider isolation structures are positioned at specific locations along the semiconductor branch portions. This asymmetric configuration provides enhanced structural support where needed, preventing necking and fractures while allowing the overall linewidth to be reduced for higher density.
Solution Approach 2:
The patent implements beforehand cushioning by pre-positioning isolation structures at critical locations before the necking phenomenon occurs. These isolation structures act as preventive support elements that cushion against the development of necking and fractures during device operation and manufacturing processes.
2Quantity of substance
If the linewidth of semiconductor branch portions is reduced to increase device density, then the integration of semiconductor structures is improved, but CD variations and fractures occur reducing yield
Solution Approach 1:
The asymmetric width design of isolation structures provides localized support that compensates for CD variations in the narrow semiconductor branch portions. The wider isolation structures act as reference points that help maintain manufacturing precision while allowing overall miniaturization.
Solution Approach 2:
The patent applies local quality by varying the width of isolation structures at different locations along the semiconductor branch portions. This local variation in isolation structure dimensions provides targeted support where CD control is most critical, while maintaining reduced linewidth in other areas for higher density.
3Manufacturing precision
If conventional SADP process is used to reduce critical dimension, then the integration of semiconductor structures is improved, but necking phenomenon and interface curvature occur reducing reliability
Solution Approach 1:
The asymmetric isolation structure design counteracts the interface curvature and expansion problems caused by conventional SADP processes. By positioning wider isolation structures at specific locations, the patent compensates for the adverse effects of SADP on interface stability while maintaining the CD reduction benefits.
Solution Approach 2:
The patent applies preliminary anti-action by designing isolation structures that preemptively counteract the necking and interface curvature effects produced by the SADP process. The wider isolation structures are positioned in advance to oppose and neutralize the harmful effects of conventional SADP on interface stability.
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a semiconductor substrate. The semiconductor substrate includes a base portion, a semiconductor bar portion on a first active area of the base portion, a set of semiconductor branch portions extending from a sidewall of the semiconductor bar portion to a second active area of the base portion, and first and second isolation structures formed on the second active area of the base portion. The first interface between the first isolation structure and the semiconductor bar portion is flat. The second interface between the second isolation structure and the semiconductor bar portion is flat. The first interface and the second interface are staggered from each other along the extending direction of the semiconductor bar portion.