Semiconductor Device Break Region Elimination
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Solution Overview
Problem
The fabrication of semiconductor devices often results in stress on transistors due to break regions formed during the Fin Field Effect Transistor process, leading to defects and reduced yield, and attempts to reduce break region width to minimize area lead to unexpected defects or increased device size.
Innovation Solution
A semiconductor device design that eliminates the break region by forming a gate electrode in its place, with overlapping gate lines and metal lines connecting them to provide signals, ensuring no physical separation between active regions and reducing stress on transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a break region is formed between transistors during FinFET process refinement, then transistor isolation is achieved, but stress is applied to the transistors resulting in failed transistors and lower process yield
Solution Approach 1:
The invention extracts and eliminates the break region from the semiconductor device structure. By removing the break region that causes stress to transistors, the patent achieves transistor isolation through alternative means (gate electrode positioning) while eliminating the harmful stress effect, thereby improving process yield without sacrificing transistor functionality
Solution Approach 2:
The invention converts the potential harm of having no break region (which could cause defects) into a benefit by strategically positioning gate electrodes. The gate electrodes serve dual purposes: maintaining necessary isolation while preventing stress application to transistors, thus converting what would be a harmful configuration into a beneficial one that improves both yield and reliability
2Area of stationary object
If the width of the break region is reduced to minimize device area, then area is reduced, but unexpected defects occur
Solution Approach 1:
The invention completely removes the break region from the device structure, eliminating the need to compromise its width. By extracting this problematic element and replacing its isolation function with gate electrode positioning, the patent achieves minimal device area without introducing the defects that would result from a narrowed break region
Solution Approach 2:
The gate electrode structure performs multiple functions: it provides transistor isolation traditionally achieved by break regions, maintains electrical connectivity where needed, and prevents stress application to transistors. This multi-functionality allows the device to achieve compact area without sacrificing reliability
3Reliability
If the width of the break region is increased to prevent defects, then transistor stress is reduced, but the area of the entire semiconductor device increases
Solution Approach 1:
The invention extracts and eliminates the break region entirely, replacing its isolation function with strategically positioned gate electrodes. This approach prevents transistor stress (improving reliability) without requiring the increased area that would result from widening a break region, as the gate electrodes provide isolation in a space-efficient manner
Solution Approach 2:
The invention shifts from using horizontal break regions for isolation to using vertically-positioned gate electrodes for isolation. This dimensional change allows isolation to be achieved without increasing the horizontal footprint of the device, maintaining compact area while preventing transistor stress
Data Source
AI summary
A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.