Semiconductor Device Avalanche Breakdown Control
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Solution Overview
Problem
Semiconductor devices face issues with breakdown, particularly avalanche breakdown, which can lead to damage due to high electric field intensity and external charge-induced fluctuations in breakdown voltage, resulting in a trade-off between ruggedness and voltage stability.
Innovation Solution
The semiconductor device incorporates a p++-type semiconductor region and an n++-type EQPR region, along with guard rings and stopper regions, to control the depletion layer and electric field distribution, ensuring avalanche breakdown occurs in a direction that reduces damage and stabilizes the breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the semiconductor device is designed to withstand avalanche breakdown, then ruggedness is improved, but breakdown voltage stability deteriorates due to external charge-induced fluctuations
Solution Approach 1:
The patent applies local quality by creating regions with different impurity concentrations within the semiconductor structure. Specifically, it uses a first semiconductor region with a first impurity concentration and a second semiconductor region with a second impurity concentration that is higher than the first. This localized variation in material properties allows different regions to perform different functions: the lower concentration region handles avalanche breakdown while the higher concentration region stabilizes the breakdown voltage, thereby resolving the contradiction between ruggedness and voltage stability.
2Stability of the object's composition
If guard rings and stopper regions are added to control electric field distribution, then breakdown voltage stability is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple functions into the semiconductor regions themselves. The first and second semiconductor regions with different impurity concentrations perform both the avalanche breakdown function and the breakdown voltage stabilization function simultaneously. This integration approach achieves the voltage stability improvement without adding separate guard rings and stopper regions, thereby avoiding increased device complexity while still controlling electric field distribution effectively.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the ruggedness of the semiconductor device at breakdown and suppresses breakdown voltage fluctuations, improving reliability and stability by managing electric field distribution and current flow.
Implementation Method 1
Semiconductor devices face issues with breakdown, particularly avalanche breakdown, which can lead to damage due to high electric field intensity and external charge-induced fluctuations in breakdown voltage
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second, and third electrodes, first and fourth semiconductor regions of a first conductivity type, and second and third semiconductor regions of a second conductivity type. The third semiconductor region is provided around the second semiconductor region along a first plane crossing a first direction from the first electrode toward the first semiconductor region and is separated from the second semiconductor region. The fourth semiconductor region is provided around the third semiconductor region along the first plane, and has a greater impurity concentration of the first conductivity type than the first semiconductor region. The second electrode is provided on the second semiconductor region and is electrically connected to the second semiconductor region. The third electrode is provided on the third and fourth semiconductor regions, is electrically connected to the third and fourth semiconductor regions, and is separated from the second electrode.