Semiconductor Breakdown Prevention Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current high-voltage semiconductor devices, such as FETs, face limitations in achieving breakdown voltage due to non-uniform electric fields, which lead to premature breakdown and restrict their performance, especially at voltages above 400 volts, and the use of field plates complicates optimal configuration and increases capacitance, reducing operating frequency.
Innovation Solution
A semiconductor device with a breakdown preventing layer comprising an insulating film and conducting elements embedded along its lateral length, which splits high electric field spikes into smaller spikes, creating a more uniform electric field and reducing premature breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate-drain spacing distance is increased to increase breakdown voltage, then the breakdown voltage should increase, but the electric field remains strongly non-uniform with a strong peak near the gate edge, limiting the device performance
Solution Approach 1:
The patent divides the gate-drain spacing into multiple segments by introducing conducting elements (field plates) at different positions. These segmented conducting elements create multiple smaller electric field peaks instead of one strong peak, achieving more uniform electric field distribution and higher breakdown voltage.
Solution Approach 2:
The patent introduces intermediary conducting elements (field plates) between the gate and drain electrodes. These intermediaries modify the electric field distribution by creating additional equipotential surfaces, thereby reducing the strong non-uniformity and peak field near the gate edge.
2Reliability
If multiple field plates are used to split the electric field into more peaks, then the breakdown voltage increases, but the optimal configuration requires precisely controlled field plate length and dielectric thickness variation, increasing device complexity
Solution Approach 1:
The patent optimizes the parameters of the conducting elements (such as their position, size, and potential) to achieve the desired electric field distribution. By carefully selecting these parameters, the patent reduces the need for complex precise control of field plate length and dielectric thickness variation.
3Reliability
If field plates are used to modulate the electric field, then the breakdown voltage increases, but significant voltage exists between the field plate and the drain electrode, causing premature breakdown
Solution Approach 1:
The patent connects the conducting elements to the same potential (gate or source potential) to create equipotential regions. This reduces the voltage difference between adjacent conducting elements and the drain electrode, preventing premature breakdown caused by high electric fields at the field plate-drain interface.
4Reliability
If field plates are used to increase breakdown voltage, then the operating voltage increases, but the inter-electrode and electrode-semiconductor capacitances increase, decreasing the device maximum operating frequency
Solution Approach 1:
The patent uses thin dielectric films to isolate the conducting elements from the semiconductor surface while maintaining electric field modulation. This minimizes the capacitance increase associated with field plates, thereby reducing the negative impact on maximum operating frequency while still achieving higher breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases operating voltage and maximum power of semiconductor devices by reducing peak electric fields and enhancing electric field uniformity, thereby minimizing premature breakdown occurrences.
Implementation Method 1
The conducting elements can be configured to split a high electric field spike otherwise present in the high-voltage surface region during operation of the device into multiple much smaller spikes
Data Source
AI summary
A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film. The conducting elements can be configured to split a high electric field spike otherwise present in the high-voltage surface region during operation of the device into multiple much smaller spikes.