Semiconductor Package Bridge Die Signal Path Reduction

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Solution Overview

Problem

The long signal transmitting path through a bridge die in semiconductor package structures can lead to signal deficiency or signal attenuation, as signals from one semiconductor die need to pass through another die to reach the substrate, resulting in inefficiencies.

Innovation Solution

A semiconductor package structure is designed where a third semiconductor die electrically connects the first and second semiconductor dies, allowing signals to be transmitted directly to the wiring structure without passing through the other semiconductor die, thereby shortening the signal path and improving signal integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a bridge die is used to connect two semiconductor dies to the substrate, then the semiconductor dies can be electrically connected to the substrate and to each other, but the signal transmitting path becomes long resulting in signal deficiency or signal attenuation

Engineering Contradiction:
Improvesignal integrityVSAvoidsignal transmitting path length
Core Design Contradiction:
ReliabilityVSLength of moving object

Solution Approach 1:

The patent transitions from a planar signal routing approach to a three-dimensional vertical routing approach. The third semiconductor die is positioned above the first and second semiconductor dies in the vertical dimension, creating direct vertical electrical paths to the substrate through vias and conductive structures. This dimensional change shortens the signal path by eliminating the need for signals to traverse horizontally through the bridge die and across the substrate, thereby improving signal integrity while reducing path length.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If signals are transmitted through the bridge die and the other semiconductor die to reach the substrate, then electrical connection is established, but signal attenuation occurs due to the long transmitting path

Engineering Contradiction:
Improvesignal transmissionVSAvoidsignal attenuation
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent extracts the signal transmission function from the traditional horizontal path through the bridge die and substrate, and reassigns it to a direct vertical path through the third semiconductor die. The third semiconductor die is configured with conductive structures that extend vertically to the substrate, extracting the signal transmission function from the lengthy horizontal route and concentrating it in a short vertical path, thereby reducing signal attenuation and energy loss.

Inventive Principle:
Principle #2Taking out (Extraction)

3Ease of manufacture

If a traditional bridge die configuration is used, then two semiconductor dies can be connected to the substrate, but the electrical path is long causing inefficiency

Engineering Contradiction:
Improvesemiconductor package assemblyVSAvoidsignal transmission efficiency
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The patent merges the functions of the bridge die and the third semiconductor die into a single integrated vertical connection structure. The third semiconductor die combines the electrical connection function to the substrate with the signal transmission function through its internal conductive structures, eliminating the need for separate bridge die and substrate routing paths. This merging of functions reduces the overall electrical path length and improves signal transmission efficiency while maintaining ease of manufacture through a unified structure.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11239174B2Semiconductor package structure and method for manufacturing the same
Publication Date: 2022.02.01 ADVANCED SEMICON ENG INC
  • US11239174B2 patent drawing
  • US11239174B2 patent drawing
  • US11239174B2 patent drawing

AI summary

A semiconductor package structure includes a first semiconductor die, a second semiconductor die, a third semiconductor die and an external contact. The second semiconductor die is disposed adjacent to the first semiconductor die. The third semiconductor die electrically connects the first semiconductor die and the second semiconductor die. The external contact is electrically connected to the third semiconductor die. An electrical path between the third semiconductor die and the external contact extends through a space between the first semiconductor die and the second semiconductor die.