Semiconductor Bridge Patterns for Uniform Seed Layer Deposition
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Solution Overview
Problem
During the die sawing operation of semiconductor substrates, the stress applied can damage integrated circuit devices due to the reduction in the area occupied by the scribe lane region, leading to non-uniform seed layer deposition and increased resistance, which results in varying bump heights and potential defects.
Innovation Solution
The formation of bridge patterns across the scribe lane region, connecting the main chip region to the scribe lane, helps in reducing indentations and ensuring a uniform seed layer deposition, thereby minimizing resistance and achieving uniform bump heights across the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the scribe lane region area is reduced to increase integration, then higher integration is achieved, but stress damage to integrated circuit devices increases
Solution Approach 1:
The scribe lane region is segmented into multiple regions by forming bridge patterns that divide it into a first region and a second region. This segmentation allows the first region to provide mechanical support while the second region remains accessible for die sawing operations, thus preventing stress damage while maintaining high integration.
Solution Approach 2:
The bridge patterns act as intermediary structures between the main chip region and the scribe lane region. These bridge patterns provide mechanical support and stress distribution, serving as a mediator that protects the integrated circuit devices from stress damage during die sawing while allowing the scribe lane to maintain its reduced area for high integration.
2Manufacturing precision
If bridge patterns are formed across the scribe lane region, then uniform seed layer deposition is achieved, but device structure complexity increases
Solution Approach 1:
The bridge patterns are formed with specific local characteristics - they are positioned to extend from the main chip region into the scribe lane region, creating localized support structures. This local quality enhancement ensures uniform seed layer deposition in critical areas without requiring complex structures throughout the entire device.
Solution Approach 2:
Instead of forming bridge patterns across the entire scribe lane region, the invention applies partial action by forming bridge patterns only in specific locations where mechanical support is most needed. This partial application achieves the necessary seed layer uniformity while minimizing the increase in device complexity.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a main chip region and a remaining scribe lane region surrounding the main chip region, a passivation layer on the main chip region, the passivation layer including a plurality of bridge patterns extending from the main chip region in a first direction across the remaining scribe lane region, a plurality of bump pads exposed by the passivation layer on the main chip region, a plurality of dam structures along edges of the main chip region on the remaining scribe lane region, the plurality of bridge patterns arranged on the plurality of dam structures at a first pitch in the first direction, a seed layer on the plurality of bump pads, and bumps on the seed layer.