Semiconductor Buffer Region Doping Peaks for Breakdown Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices, such as IGBTs, face challenges in optimizing the doping concentration profiles to enhance breakdown voltage and short-circuit withstand capability, particularly in the buffer and drift regions, which affects the overall performance and reliability.
Innovation Solution
The semiconductor device incorporates a buffer region with a higher doping concentration than the drift region, featuring multiple hydrogen chemical concentration peaks and corresponding doping concentration peaks, strategically positioned to inhibit hole injection and extend the depletion layer, thereby improving breakdown voltage and short-circuit withstand capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the doping concentration in the buffer region is increased to enhance breakdown voltage, then the short-circuit withstand capability is improved, but the device complexity increases due to multiple concentration peaks
Solution Approach 1:
The patent applies local quality by creating multiple localized high-concentration regions (peaks) within the buffer region at specific depth positions. Each peak serves a localized function in controlling the depletion layer and inhibiting hole injection, while the overall structure maintains a manageable doping profile through strategic placement of these localized high-concentration zones rather than uniform doping throughout.
2Reliability
If multiple hydrogen chemical concentration peaks are introduced to control hole injection, then the short-circuit withstand capability is enhanced, but the manufacturing precision requirements increase
Solution Approach 1:
The patent employs preliminary action by pre-establishing multiple hydrogen chemical concentration peaks during the manufacturing process before the device operates. These peaks are intentionally created at specific depth positions and concentration levels to proactively control hole injection behavior and depletion layer formation, ensuring the device has the required short-circuit withstand capability built-in from fabrication rather than relying on post-manufacturing adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively enhances the breakdown voltage and short-circuit withstand capability by controlling the doping concentration profiles, ensuring improved performance and reliability of the semiconductor device.
Implementation Method 1
a buffer region 20 having a plurality of doping concentration peaks 25 arranged at different positions in the depth direction... each of the plurality of doping concentration peaks 25 coinciding with a chemical concentration peak 125 of hydrogen... the buffer region 20 having hydrogen donors
Implementation Method 2
strategically positioned to inhibit hole injection and extend the depletion layer, thereby improving breakdown voltage and short-circuit withstand capability
Data Source
AI summary
Provided is a semiconductor device, wherein the buffer region of the semiconductor substrate has a plurality of hydrogen chemical concentration peaks arranged in different positions in the depth direction of the semiconductor substrate, a plurality of doping concentration peaks; and a high concentration region provided between the deepest hydrogen chemical concentration peak and the drift region, wherein the doping concentration distribution of the depth direction of the high concentration region has a slope where the doping concentration gradually decreases toward the drift region, wherein the slope includes a convex portion on top, wherein in an approximate concentration line that approximates a gradient of the slope with a straight line, when the concentration in a depth position of the shallowest doping concentration peak is referred to as the shallowest reference concentration, the doping concentration of the shallowest doping concentration peak is from 5% to 50% of the shallowest reference concentration.