Semiconductor Buffer Region Helium Peaks for Carrier Lifetime Control
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Solution Overview
Problem
Current semiconductor device manufacturing techniques face challenges in precisely controlling carrier lifetime and reducing reverse recovery loss and leakage current due to limitations in forming recombination center density peaks with helium implantation, which affects the device's performance and efficiency.
Innovation Solution
The implementation of multiple helium chemical concentration peaks and recombination center density peaks in the buffer region of the semiconductor device, formed by implanting helium at specific depth positions, allows for precise control of carrier lifetime and reduction of reverse recovery loss and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If helium implantation is used to form recombination centers, then carrier lifetime can be controlled, but the precision of controlling carrier lifetime and the ability to reduce reverse recovery loss and leakage current are insufficient
Solution Approach 1:
The patent divides the single recombination center formation process into multiple discrete helium implantation steps, each creating a separate recombination center density peak at different depth positions. This segmentation allows independent optimization of each peak's characteristics (depth, concentration, width) to simultaneously achieve precise carrier lifetime control and effective reduction of reverse recovery loss and leakage current.
Solution Approach 2:
The patent creates recombination center density peaks with different local characteristics at different depth positions within the buffer region. Each peak is locally optimized with specific implantation conditions (energy, dose, depth) tailored to address particular issues at that depth, such as controlling carrier lifetime in upper regions and reducing leakage current in lower regions.
2Manufacturing precision
If multiple helium implantation steps are used to create multiple recombination center density peaks, then carrier lifetime control and reverse recovery loss reduction are improved, but the device complexity and manufacturing process complexity increase
Solution Approach 1:
The manufacturing process is segmented into multiple discrete implantation steps, each with specific parameters. While this increases process steps, each step is independently optimized and can be performed with standard implantation equipment, making the complexity manageable through systematic parameter control rather than requiring entirely new manufacturing capabilities.
Solution Approach 2:
The patent controls the complexity by systematically varying implantation parameters (energy, dose, depth position) across different steps rather than introducing fundamentally new processes. This allows precise control of recombination center peak positions and characteristics using existing manufacturing tools with adjusted parameters, rather than requiring new equipment or techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved carrier lifetime control and reduced reverse recovery loss and leakage current, enhancing the semiconductor device's performance and efficiency by strategically placing recombination center density peaks in the buffer region.
Implementation Method 1
lattice defects are formed by implanting particles such as helium into a semiconductor device
Data Source
AI summary
Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface and having a drift region of a first conductivity type; and a buffer region of the first conductivity type provided between the drift region and the lower surface of the semiconductor substrate and having a higher doping concentration than the drift region, wherein the buffer region has: a first recombination center density peak; and a second recombination center density peak arranged on a side of the upper surface of the semiconductor substrate relative to the first recombination center density peak, and an integrated value of the second recombination center density peak in a depth direction is greater than an integrated value of the first recombination center density peak in the depth direction.