Semiconductor Capacitor Structure With Buffered Wet Etching
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the difficulty in maintaining or increasing capacitance value due to etching defects in double-sided capacitance structures, caused by edge size and etching load effects, which lead to damage in the peripheral area and uneven deposition of electrode materials.
Innovation Solution
A method is introduced where a first supporting layer is placed between the substrate and the dielectric layers, isolating the etching solution and preventing direct contact with the substrate, ensuring that any leakage occurs only in one dielectric layer, thus maintaining structural integrity and preventing substrate damage during the etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a double-sided capacitance structure with supporting layer is used, then the capacitance value can be increased, but etching defects occur due to edge size effect and etching load effect
Solution Approach 1:
The substrate is divided into array area and peripheral area with different supporting layer configurations. The first supporting layer is selectively formed only in the peripheral area, while the second supporting layer is formed in both areas. This segmentation allows different etching conditions to be applied to different regions, resolving the etching defects caused by edge size effect and etching load effect while maintaining the capacitance structure.
Solution Approach 2:
Different supporting layer structures are applied to different areas of the substrate. The peripheral area has a first supporting layer with specific properties, while the array area has a second supporting layer. This local differentiation optimizes the etching process for each area's specific requirements, preventing etching defects in the peripheral area while maintaining capacitance value.
2Quantity of substance
If the dielectric layer thickness is reduced to increase capacitance value, then the capacitance increases, but the substrate becomes more vulnerable to etching solution damage
Solution Approach 1:
The first supporting layer is formed in the peripheral area before the etching process to provide protective cushioning. This supporting layer acts as a barrier that prevents the etching solution from directly damaging the substrate, allowing the use of thinner dielectric layers to increase capacitance while maintaining substrate integrity through the pre-established protective layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively isolates the etching solution, preventing substrate damage and ensuring the structural and functional integrity of the semiconductor structure by controlling the etching process and maintaining the integrity of the dielectric layers.
Implementation Method 1
The third dielectric layer is removed through a wet etching process
Data Source
AI summary
A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The method for manufacturing the semiconductor structure includes: providing a substrate, in which the substrate includes an array area and a peripheral area adjacent to each other, and the array area includes a buffer area connected to the peripheral area; forming a first dielectric layer, a first supporting layer, a second dielectric layer, a second supporting layer and a third dielectric layer, which are successively stacked onto one another, on the substrate, forming a groove-type lower electrode, which at least penetrates through the third dielectric layer and the second supporting layer, in the buffer area; removing the third dielectric layer through a wet etching process; and etching the second supporting layer in the peripheral area after removing the third dielectric layer.