Semiconductor Structure With Bulk Pick-Up Region
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in maintaining effective current paths and preventing hole accumulation in the substrate, as conventional butting contacts struggle to balance distance and impedance, leading to reduced device performance.
Innovation Solution
A semiconductor structure is designed with a source feature and an adjoining bulk pick-up region, where a salicide layer is formed to create a butting contact with the same electrical potential, allowing for efficient hole conduction and reducing impedance by optimizing the distance between bulk pick-up regions between 0.2 to 10 μm.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional butting contacts are used to reduce device area, then circuit density increases, but hole accumulation occurs and current paths become ineffective
Solution Approach 1:
The substrate is divided into multiple isolated bulk pick-up regions separated by lightly doped regions. This segmentation allows each bulk pick-up region to independently collect holes while maintaining effective current paths through the lightly doped regions, resolving the contradiction between high circuit density and reliable current paths.
Solution Approach 2:
Lightly doped regions serve as intermediary elements between bulk pick-up regions and source/drain regions. These intermediaries enable effective current paths while preventing direct hole accumulation at the butting contact interfaces, thus maintaining both high density and reliable current transport.
2Reliability
If butting contacts are used to reduce conduction resistance, then device performance improves, but distance between bulk pick-up regions becomes difficult to optimize
Solution Approach 1:
The invention changes the doping parameter of the substrate regions, creating lightly doped regions with specific resistivity values (10^-3 to 10^-6 ohm-cm). This parameter change enables simultaneous achievement of low conduction resistance and simplified distance optimization, as the doping level directly controls both electrical properties and hole collection efficiency.
3Productivity
If scaling down is implemented to increase production efficiency, then manufacturing cost decreases, but processing complexity increases
Solution Approach 1:
The lightly doped regions serve multiple functions simultaneously: they act as current transport paths, hole collection regions, and isolation barriers. This multi-functionality reduces the number of separate processing steps needed, thereby decreasing processing complexity while maintaining high production efficiency from scaling down.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the density of circuits, prevents hole accumulation, and maintains device performance by ensuring effective current paths and reduced impedance, thereby improving the speed and efficiency of semiconductor devices.
Implementation Method 1
a salicide layer is formed to create a butting contact with the same electrical potential, allowing for efficient hole conduction
Data Source
AI summary
A semiconductor structure includes a gate structure disposed on a substrate. At least one lightly doped region adjoins the gate structure in the substrate. The at least one lightly doped region has a first conductivity type. A source feature and a drain feature are on opposite sides of the gate structure in the substrate. The source feature and the drain feature have the first conductivity type. The source feature is in the at least one lightly doped region. A bulk pick-up region adjoins the source feature in the at least one lightly doped region. The bulk pick-up region has a second conductivity type.