Semiconductor Device Bump Area Optimization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices with a multi-finger configuration, temperature variations among unit transistors lead to inefficiencies and potential transistor destruction due to thermal runaway, as existing solutions fail to adequately consider heat dissipation differences across the substrate.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with transistor arrays and bumps arranged such that the area per unit transistor is larger in regions closer to the outer frame, enhancing heat dissipation and reducing temperature variations by optimizing the placement and size of bumps relative to unit transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If unit transistors are arranged in parallel on a semiconductor substrate to achieve high output power, then power amplification capability is improved, but temperature variation among unit transistors increases causing thermal runaway
Solution Approach 1:
The patent applies local quality by making bumps have different areas depending on their position on the substrate. Bumps closer to the outer frame (which have poorer heat dissipation) are made larger in area to provide enhanced heat dissipation capacity locally, while bumps closer to the center can be smaller. This non-uniform bump area distribution compensates for the non-uniform heat dissipation characteristics across the substrate, reducing temperature variation among unit transistors while maintaining high output power capability.
2Power
If more unit transistors are placed on the inner side of the substrate, then output power is improved, but maximum temperature increases due to limited heat dissipation space
Solution Approach 1:
The patent changes the parameter of bump area based on position. By increasing the area of bumps located closer to the outer frame where heat dissipation is more difficult, the system compensates for the thermal accumulation effect. This parameter change (bump area) directly addresses the maximum temperature issue while allowing more unit transistors to be placed on the inner side for higher output power.
3Ease of manufacture
If uniform bump sizes are used for all unit transistors, then manufacturing is simplified, but temperature uniformity deteriorates due to different heat dissipation conditions across the substrate
Solution Approach 1:
The patent implements local quality by varying bump areas according to their positional heat dissipation characteristics. Bumps near the outer frame are made larger to enhance heat dissipation where it is most needed, while bumps near the center can be smaller. This non-uniform design improves temperature uniformity across the substrate while the bump structure itself remains relatively simple to manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively decreases the maximum temperature and reduces temperature variations among unit transistors, improving power efficiency and preventing transistor damage by enhancing heat dissipation in regions with lower heat dissipation capabilities.
Implementation Method 1
The area of the first bump per one of the plurality of first unit transistors is larger than the area of the second bump per one of the plurality of second unit transistors... enhancing heat dissipation and reducing temperature variations
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a principal surface which has a first side in a first direction and a second side in a second direction. A plurality of transistor arrays is formed in a region adjacent to the first side of the semiconductor substrate. A plurality of bumps include first and second bumps which are longer in the first direction. The distance between the first side and the first bump is shorter than the distance between the first side and the second bump. The plurality of transistor arrays include a first and a second transistor arrays. The first transistor array has a plurality of first unit transistors arranged along the first direction such that the first unit transistors overlap the first bump. The second transistor array has a plurality of second unit transistors arranged along the first direction such that the second unit transistors overlap the second bump.