Semiconductor Bump Structure for Fine-Pitch Reliable Bonding
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Solution Overview
Problem
Semiconductor devices face challenges in achieving compactness and high density due to limitations in the design of bump patterns, which affect the pitch between electrode terminals and the reliability of electrical connections.
Innovation Solution
The semiconductor device incorporates a bump pattern with a support pattern and a solder pillar pattern, where the support pattern has a greater width than the solder pillar pattern, and includes an intermetallic compound, enhancing the adhesive force and reliability of the connection between the under-bump pattern and the bump pattern, while maintaining a fine pitch and size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the bump pattern uses a narrow width to achieve fine pitch, then the pitch between electrode terminals decreases, but the adhesive force between the bump pattern and under-bump pattern becomes insufficient
Solution Approach 1:
The bump pattern is segmented into two distinct parts: a support pattern at the bottom with greater width for strong adhesion to the under-bump pattern, and a solder pillar pattern at the top with smaller width for fine pitch and electrical connection. This segmentation allows each part to fulfill its specific function optimally.
Solution Approach 2:
Different regions of the bump pattern are given different widths and materials tailored to their specific functions. The support pattern has greater width and includes intermetallic compounds for maximum adhesive force, while the solder pillar pattern has reduced width for fine pitch requirements. This local differentiation resolves the contradiction between adhesion and pitch.
2Volume of moving object
If the bump pattern is made compact to increase device density, then the device size decreases, but the connection reliability between bump pattern and under-bump pattern deteriorates
Solution Approach 1:
The bump pattern is divided into a support pattern base and a solder pillar pattern, where the support pattern provides a wide adhesive foundation that remains substantial even when the overall device size is reduced. This segmentation allows compact device design while maintaining reliable connections.
Solution Approach 2:
The support pattern is formed as a composite structure including intermetallic compounds (such as Cu-Sn intermetallic compounds) that provide exceptional adhesive strength. This composite material approach ensures high connection reliability while allowing the overall bump pattern to be optimized for compactness.
Data Source
AI summary
Disclosed is a semiconductor device comprising a semiconductor substrate, an under-bump pattern on the semiconductor substrate and including a first metal, a bump pattern on the under-bump pattern, and an organic dielectric layer on the semiconductor substrate and in contact with a sidewall of the bump pattern. The bump pattern includes a support pattern in contact with the under-bump pattern and having a first width, and a solder pillar pattern on the support pattern and having a second width. The first width is greater than the second width. The support pattern includes at least one of a solder material and an intermetallic compound (IMC). The intermetallic compound includes the first metal and the solder material.