Semiconductor Bump Isolation via Trench Recessed Fin Structures
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Solution Overview
Problem
Conventional FinFET fabrication faces challenges in layout design and structure improvement, particularly in achieving effective isolation without disrupting subsequent element formation.
Innovation Solution
The method involves removing fin-shaped structures in a predetermined region to form a trench recessed from the substrate base and creating a first bump protruding from the trench bottom, where the bump's width is larger than the fin structures, allowing for better isolation without disturbing subsequent elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fin shaped structures are removed to form a trench and bump for better isolation, then isolation quality is improved, but device complexity increases
Solution Approach 1:
The patent introduces a vertical dimension by forming a trench recessed into the substrate and a bump protruding from the trench bottom, creating a three-dimensional isolation structure. This vertical configuration provides superior isolation compared to planar approaches while maintaining compatibility with subsequent device fabrication processes.
Solution Approach 2:
The isolation structure is segmented into distinct components: a trench portion recessed from the substrate base and a bump portion protruding from the trench bottom. This segmentation allows each component to perform its isolation function independently, achieving reliable electrical isolation between adjacent devices while the wider bump portion prevents disruption to subsequently formed elements.
Data Source
AI summary
A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A width of the first bump is larger than a width of each of the fin shaped structures.