Semiconductor Bump Pixel Structure for Transflective LCDs
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Solution Overview
Problem
Conventional pixel structures for transflective LCDs face reliability issues due to bumps made of photoresist material, which increase manufacturing costs and complexity, and require multiple photomasks in the fabrication process.
Innovation Solution
A pixel structure is developed with semiconductor bumps formed directly from the semiconductor layer, simplifying the process and improving reliability by eliminating the need for photoresist bumps and reducing the number of photomasks, where the semiconductor layer and bumps are formed simultaneously, and the reflective and transparent pixel electrodes are connected through a contact hole in a dielectric layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If photoresist bumps are used to increase light reflection, then the reflective performance is improved, but the reliability of the pixel structure deteriorates
Solution Approach 1:
The patent changes the material parameter of the bumps from photoresist to semiconductor material, which maintains the light reflection function while significantly improving structural reliability and compatibility with existing fabrication processes
Solution Approach 2:
The patent uses semiconductor material that serves dual functions: forming the bumps for light reflection and serving as the active semiconductor layer for transistor operation, thereby eliminating the need for separate photoresist bumps
2Illumination intensity
If photoresist bumps are formed to enhance reflection, then the optical performance is improved, but the manufacturing cost increases
Solution Approach 1:
The semiconductor layer serves multiple functions: it acts as the active layer for the transistor and simultaneously forms the reflective bumps, eliminating the need for separate photoresist bump formation processes and reducing manufacturing complexity
Solution Approach 2:
The patent merges the function of forming reflective bumps with the semiconductor layer formation process, so that one fabrication step achieves both the transistor active layer and the optical reflection structure
3Illumination intensity
If photoresist bumps are used to increase reflection, then the optical performance is improved, but the process complexity increases
Solution Approach 1:
The patent combines the formation of the semiconductor active layer and the reflective bumps into a single fabrication step, reducing the number of process steps and simplifying the overall manufacturing process
4Illumination intensity
If photoresist bumps are formed to enhance reflection, then the optical performance is improved, but the number of photomasks required increases
Solution Approach 1:
The semiconductor layer serves as both the transistor active layer and the bump structure, allowing a single photomask pattern to define both functions simultaneously, thereby reducing the total number of photomasks required
Data Source
AI summary
A pixel structure including a substrate, a gate, a dielectric layer, a semiconductor layer, a plurality of semiconductor bumps, a source, a drain and a reflective pixel electrode is disclosed. The gate is disposed on the substrate. The dielectric layer is disposed on the substrate and covers the gate. The semiconductor layer is disposed on the dielectric layer over the gate. The semiconductor bumps are disposed on the dielectric layer. The source and drain are disposed on the semiconductor layer. The reflective pixel electrode covering the semiconductor bumps is disposed on the dielectric layer and electrically connected to the drain.