Semiconductor Bump Electrode Formation via Resist Plating
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Solution Overview
Problem
Conventional methods for forming semiconductor device bump electrodes are inefficient due to long production times, shape variations, and high costs, particularly when dealing with large diameter wafers and numerous pins, as they require spraying metallic particles and carrier gases over the entire wafer surface and involve expensive metal film deposition and peeling processes.
Innovation Solution
A method involving the application of a resist to semiconductor electrode pads, followed by curing and opening to form plating solution-filled openings, allowing for the formation of stable bump electrodes through electroplating without the need for expensive metal films, thereby reducing production time and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas deposition method is used to form fine metal bumps, then fine metal bumps can be formed on electrode pads, but the production time becomes extremely long due to scanning the entire wafer surface
Solution Approach 1:
The patent divides the wafer surface into multiple regions with different resist thicknesses. By selectively removing resist from specific regions, the plating solution is directed only to electrode pad areas, avoiding the need to scan the entire wafer surface. This segmentation approach maintains fine bump formation precision while dramatically reducing production time.
Solution Approach 2:
The patent creates local variations in resist thickness across the wafer surface, with thicker resist in non-electrode regions and thinner or removed resist in electrode pad regions. This local quality differentiation ensures that plating occurs only where needed, eliminating wasted deposition time on non-functional areas while maintaining precise bump formation on electrode pads.
2Stability of the object's composition
If metal film deposition is performed to form fine metal bumps, then stable bumps can be formed, but the manufacturing cost increases due to expensive metal materials
Solution Approach 1:
The patent replaces expensive metal films with a disposable resist structure that forms the bump shape. The resist is applied, patterned, and used as a mold for plating, then removed after serving its purpose. This disposable approach eliminates the need for expensive metal deposition while maintaining bump stability through proper plating process control.
Solution Approach 2:
The patent introduces resist as an intermediary material between the electrode pad and the final metal bump. The resist serves as a temporary mold that defines the bump geometry during manufacturing, then is removed after the plating process. This intermediary approach allows precise bump formation without requiring expensive metal film deposition techniques.
3Manufacturing precision
If the entire wafer surface is scanned to spray metal particles, then uniform coverage can be achieved, but the production efficiency decreases due to the large area being processed
Solution Approach 1:
The patent segments the wafer surface into active electrode pad regions and inactive regions by creating corresponding patterns in the resist layer. The plating process is then applied only to the segmented active regions, maintaining uniform coverage on electrode pads while avoiding wasteful processing of the entire wafer surface, thus improving production efficiency.
Solution Approach 2:
The patent performs preliminary patterning of the resist layer to predefine the exact regions where bumps should form. This preliminary action creates a mask that guides the subsequent plating process, ensuring uniform coverage only on necessary electrode pad areas without requiring scanning or processing of the entire wafer surface, thereby enhancing production efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the efficient and cost-effective manufacturing of semiconductor devices with stable, minute bump electrodes, suitable for larger diameter and multi-pin semiconductor elements, by using a resist-based process that ensures uniformity and productivity in forming plating bumps.
Implementation Method 1
curing the resist by applying light or heat to the resist
Implementation Method 2
forming bump electrodes on the electrode pad surfaces by filling a plating solution into the openings of the resist
Data Source
AI summary
A method for manufacturing a semiconductor device includes: supplying a resist to a first surface of a semiconductor element having a plurality of electrode pads to cover the electrode pad surfaces; opening the resist on the electrode pad surfaces to expose the electrode pad surfaces from the resist; curing the resist by applying light or heat to the resist; forming bump electrodes on the electrode pad surfaces by filling a plating solution into the openings of the resist; and peeling the resist from the first surface of the semiconductor element.