Semiconductor Device With Buried Insulation for Leakage Blocking
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in preventing leakage currents between source/drain regions due to the lack of effective insulation from the active pattern, which can degrade the reliability of the source/drain regions.
Innovation Solution
The semiconductor device incorporates buried insulating patterns and an insulating liner layer to electrically insulate the source/drain regions from the active pattern, blocking leakage paths and enhancing the reliability of the source/drain connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If source/drain regions are directly connected to active pattern without insulation, then manufacturing process is simpler, but leakage current occurs between source/drain regions
Solution Approach 1:
A buried insulating pattern is introduced as an intermediary element between the source/drain region and the active pattern. This insulating pattern extends from the lower interlayer insulating layer to the active pattern, creating electrical isolation and preventing leakage current while maintaining structural organization.
Solution Approach 2:
The insulating structure is segmented into multiple components: a lower interlayer insulating layer, a buried insulating pattern extending upward, and an insulating liner layer. This segmentation allows each component to perform its specific function in blocking leakage paths while maintaining overall device reliability.
2Reliability
If source/drain region is insulated from active pattern using buried insulating pattern, then leakage current is blocked, but device structure becomes more complex
Solution Approach 1:
The buried insulating pattern is merged with the lower interlayer insulating layer, forming a continuous insulating structure. This integration reduces the number of discrete components and simplifies the overall device structure while effectively blocking leakage current paths.
Solution Approach 2:
The buried insulating pattern serves multiple functions: it provides electrical isolation between the source/drain region and active pattern, supports the insulating liner layer, and contributes to the overall structural integrity of the device. This multi-functionality reduces the need for additional separate components.
3Reliability
If second source/drain region overlaps active pattern, then electrical connection is improved, but leakage path is formed along active pattern
Solution Approach 1:
The buried insulating pattern acts as an intermediary barrier between the second source/drain region and the active pattern. Even though the source/drain region overlaps the active pattern for electrical connection, the insulating pattern prevents direct electrical contact, blocking the leakage path while allowing controlled electrical connection through designated contact points.
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A semiconductor device includes a lower interlayer insulating layer, an insulating pattern extending in a first direction on an upper surface of the lower interlayer insulating layer, an active pattern extending in the first direction on an upper surface of the insulating pattern, a plurality of nanosheets stacked in a third direction on an upper surface of the active pattern, a gate electrode extending in a second direction on the upper surface of the active pattern, a first source/drain region on a first side of the gate electrode, a second source/drain region on a second side of the gate electrode opposite to the first side of the gate electrode in the first direction, and a lower source/drain contact extending through the lower interlayer insulating layer, the insulating pattern, and the active pattern in the third direction.