Semiconductor Burn-In Voltage Generation via Internal Power Supply Circuit
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Solution Overview
Problem
Existing semiconductor devices require additional circuits for burn-in tests, limiting the number of devices that can be tested simultaneously due to the need for separate wiring connections for different power supply voltages, which increases testing complexity and costs.
Innovation Solution
A semiconductor device with an internal power supply generation circuit that sets internal power supply voltages based on data stored in a non-volatile memory, allowing for a single external connection to apply burn-in voltages to both VCC and VDD terminals, reducing the need for additional wiring and increasing test throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate wiring connections are provided for VCC and VDD terminals to apply different power supply voltages during burn-in testing, then accurate voltage application is achieved, but the number of wirings increases and testing complexity increases
Solution Approach 1:
The semiconductor device generates its own internal power supply voltage VDD from the external power supply voltage VCC using an internal power supply generation circuit. This self-service mechanism eliminates the need for external wiring to the VDD terminal during burn-in testing, as the device autonomously produces the required internal voltage from the externally applied VCC voltage, thereby reducing wiring complexity while maintaining voltage application accuracy
Solution Approach 2:
The external power supply terminal VCC serves dual functions: it provides power supply voltage to the internal power supply generation circuit for generating VDD, and simultaneously serves as the burn-in test voltage application terminal. This multi-functionality allows a single wiring connection to fulfill both power supply and test voltage application requirements, resolving the contradiction between wiring simplicity and testing accuracy
2Reliability
If additional circuits are arranged for burn-in testing to apply different voltages to VCC and VDD terminals, then proper voltage stress is achieved, but the number of test terminals increases and test throughput decreases
Solution Approach 1:
The internal power supply generation circuit autonomously generates the internal power supply voltage VDD from the external power supply voltage VCC without requiring additional external circuits or test terminals. This self-service capability enables burn-in testing to be performed using only the VCC terminal connection, eliminating the need for separate VDD terminal wiring and thereby increasing test throughput while maintaining proper voltage stress application
Solution Approach 2:
The function of externally applying voltage to the VDD terminal is extracted and replaced by an internal voltage generation mechanism. The internal power supply generation circuit takes over the voltage generation function that would otherwise require external circuitry, allowing burn-in testing to proceed with fewer external connections and higher test productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient burn-in testing of multiple semiconductor devices with reduced wiring requirements, improving test efficiency and reducing the cost of burn-in test apparatuses by allowing a single connection to apply necessary voltages, thereby increasing the number of devices that can be tested in a single run.
Implementation Method 1
an internal power supply generation circuit configured to generate an internal power supply voltage from the external power supply voltage applied to the external power supply terminal
Data Source
AI summary
A semiconductor device includes an internal power supply generation circuit that generates an internal power supply voltage from an external power supply voltage and a non-volatile memory circuit. The semiconductor device sets the internal power supply voltage generated by the internal power supply generation circuit based on data stored in the non-volatile memory circuit. A mode signal that switches the internal power supply voltage is set in the non-volatile memory circuit. The mode signal is set to a burn-in mode before a burn-in test and is set to a normal mode after the burn-in test. In the burn-in test, when a VCC burn-in voltage is applied to a VCC terminal to start the semiconductor device, the internal power supply generation circuit generates a VDD burn-in voltage upon receiving the mode signal set in the burn-in mode.