Semiconductor Power Module Bus Layout for High Current and Low Inductance
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Solution Overview
Problem
Semiconductor power modules face issues with excessive stray inductance and electromagnetic interference during switching, leading to increased switching losses. Additionally, high current output requires multiple chips in parallel, increasing the module's size and inductance.
Innovation Solution
The semiconductor power module is designed with a substrate having orthogonal conductive regions and power chips connected in a series configuration. This configuration minimizes stray inductance and enhances heat dissipation by optimizing the layout and connections between the conductive regions and power chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple chips are connected in parallel to output high current, then the current output capability is improved, but the module size and inductance increase
Solution Approach 1:
The patent divides the power module into multiple independent chip units (first power chip, second power chip, third power chip, fourth power chip) that can be connected in parallel. Each chip is mounted on a separate substrate region with its own conductive paths, allowing current to be distributed across multiple smaller units rather than requiring a single large chip or tightly coupled parallel configuration, thereby reducing overall inductance while maintaining current output capability.
Solution Approach 2:
The patent employs a three-dimensional layout where power chips are arranged in multiple layers and directions on the substrate. The conductive regions extend in both first and second directions, creating a spatial distribution that reduces the effective loop area and inductance while accommodating multiple chips in a compact footprint, thus improving current capability without proportionally increasing module size.
2Power
If multiple chips are connected in parallel to output high current, then the current output capability is improved, but the stray inductance increases
Solution Approach 1:
The patent segments the current paths into multiple independent conductive regions on the substrate, each serving a specific power chip. This segmentation allows current from multiple chips to flow through separate, optimized paths that minimize loop areas, thereby reducing the cumulative stray inductance while maintaining high current output capability through parallel connection.
Solution Approach 2:
The patent optimizes the local conductive path geometry around each power chip, creating short and direct connection paths between the chips and the external terminals. The conductive regions are specifically shaped and positioned to minimize the enclosed loop area for each current path, which directly reduces stray inductance at the local level while supporting high current output.
3Device complexity
If conventional layout is used, then the module structure is simple, but the heat dissipation effect is poor
Solution Approach 1:
The patent divides the heat dissipation function into multiple independent thermal paths, with each power chip having its own dedicated heat dissipation structure and conductive connection to the substrate. This segmentation allows heat from each chip to be dissipated separately through optimized thermal vias and conductive paths, improving overall heat dissipation efficiency while maintaining a relatively simple modular structure.
Data Source
AI summary
A semiconductor power device, includes: a substrate including a first direction and a second direction orthogonal to each other; a first conductive region including a first transverse section and a second transverse section; a second conductive region, the second conductive region and the first conductive region spaced apart on the substrate; the second conductive region including a third transverse section and a fourth transverse section; and the first transverse section, the third transverse section, the second transverse section, and the fourth transverse section disposed in the first direction, where the first conductive region and the second conductive region are configured to transmit DC signals; at least one first power chip connected to the first transverse section and the third transverse section; and at least one second power chip connected to the second transverse section and the fourth transverse section.


