Power Semiconductor Bus Line Layout for Wire Bonding Reliability
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Solution Overview
Problem
Existing power semiconductor devices face challenges in achieving stable electrical performance and reliability, particularly in high-temperature environments, and there is a need for improved efficiency and durability in handling high power and voltage.
Innovation Solution
The semiconductor device incorporates a channel layer with a barrier layer of different energy band gap, a gate electrode, and bus lines with protruding extensions to enhance electrical features and reliability, including a source and drain bus line design with convex edges and reduced width protrusions to distribute impact and improve connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bus line designs are used in power semiconductor devices, then manufacturing is simpler, but reliability is reduced due to wire bonding damage and unstable electrical performance
Solution Approach 1:
The bus line is divided into multiple segments including a body portion and multiple protrusion parts, where each protrusion part has a reduced width compared to the body portion. This segmentation allows the bus line to distribute impact forces across multiple points rather than concentrating stress at single bonding locations, thereby improving reliability while maintaining manufacturing feasibility through standardized fabrication processes
Solution Approach 2:
The bus line features local variations in width where protrusion parts have reduced width compared to the body portion. This local quality change creates specific mechanical properties at protrusion locations that are more resistant to wire bonding damage, while the overall bus line maintains its electrical conductivity and structural integrity
2Reliability
If standard bus line designs are used, then manufacturing is easier, but the device is more susceptible to damage from wire bonding processes
Solution Approach 1:
The bus line design incorporates protrusion parts with reduced width that are positioned to absorb and distribute impact forces from wire bonding processes before these forces can damage critical bonding locations. This beforehand cushioning structure is built into the bus line geometry, providing inherent protection against manufacturing damage without requiring additional protective layers or complex fabrication steps
3Reliability
If conventional materials are used for channel and barrier layers, then manufacturing is simpler, but electrical performance and high-temperature stability are insufficient
Solution Approach 1:
The device employs a composite material structure where the channel layer and barrier layer are made from different semiconductor materials with complementary properties. The channel layer provides high electron mobility for efficient current conduction, while the barrier layer with wider bandgap provides high-temperature stability and electrical isolation. This composite approach achieves superior electrical performance and thermal stability while using established semiconductor fabrication techniques for each material layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves electrical features and reliability, allowing for stable operation in high-temperature environments and efficient power handling, while reducing the risk of damage from wire bonding processes.
Implementation Method 1
a barrier layer disposed on the channel layer, and including a material with an energy band gap different from that of the channel layer
Data Source
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AI summary
A semiconductor device includes a channel layer; a barrier layer disposed on the channel layer, and including a material with an energy band gap different from that of the channel layer; a gate electrode disposed above the barrier layer, and extending in a first direction; a gate semiconductor layer disposed between the barrier layer and the gate electrode; a source electrode and a drain electrode, respectively disposed on opposite sides of the gate electrode in a second direction intersecting the first direction, each extending in the first direction and connected to the channel layer; a source bus line disposed on the source electrode and the drain electrode, and connected to the source electrode; and a drain bus line spaced apart from the source bus line, wherein each of the source bus line and the drain bus line includes a body portion extending in the second direction, and a plurality of protrusion parts protruding from the body portion in the first direction, each having a width reduced as the protrusion part is further away from the body portion.