Semiconductor Device Package with Bypass Capacitor for High Frequency Voltage Smoothing
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Solution Overview
Problem
Conventional semiconductor devices face challenges in smoothing voltage at high frequency ranges, particularly when difference frequencies exceed several MHz, due to interference from matching circuits between the chip end face and capacitors, which affects amplification characteristics.
Innovation Solution
A semiconductor device package structure incorporating a conductive base plate, metal cap, and insulating layers with a bypass reservoir capacitor connected directly to the drain terminal electrode of the high frequency semiconductor chip, bypassing the output matching circuit to minimize inductance and smooth voltage effectively across high frequency bands.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a capacitor is connected near the RF output terminal to smooth voltage, then voltage smoothing is effective at low difference frequencies (several MHz), but at high difference frequencies (several hundreds of MHz), the matching circuit intervenes between the chip end face and capacitor, preventing effective voltage smoothing
Solution Approach 1:
The invention extracts the capacitor connection from the conventional path through the matching circuit and directly connects it to the chip end face. This removes the matching circuit intervention that blocked voltage smoothing at high frequencies, allowing the capacitor to effectively smooth voltage across all difference frequency ranges.
Solution Approach 2:
The invention introduces a direct conductive path as an intermediary connection between the chip end face and capacitor, bypassing the matching circuit. This new intermediary path enables effective voltage smoothing by providing a low-impedance route that works across all frequency ranges.
2Ease of manufacture
If conventional capacitor connection through matching circuit is used, then circuit structure is standard, but reactance between bias power supply and chip end face increases at high frequencies, degrading amplification characteristics
Solution Approach 1:
The invention extracts the capacitor connection from the standard matching circuit path and directly connects it to the chip end face. This modification maintains ease of manufacture while eliminating the reactance problem that degraded amplification characteristics at high frequencies.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective smoothing of voltage at the chip end face even at high difference frequencies, ensuring stable amplification characteristics across microwave, millimeter wave, and submillimeter wave bands by reducing reactance between the bias power supply and the chip end face.
Implementation Method 1
a bypass reservoir capacitor connected between an end face of the drain terminal electrode and a feed through utilized for capacitor
Implementation Method 2
smooth the voltage of the end face of drain even when a difference frequency is several hundreds of MHz by connecting a bypass reservoir capacitor
Data Source
Figure 1A~1D
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AI summary
According to one embodiment, provided is a semiconductor device includes: a high frequency semiconductor chip; an input matching circuit disposed at the input side of the high frequency semiconductor chip; an output matching circuit disposed at the output side of the high frequency semiconductor chip; a high frequency input terminal connected to the input matching circuit; a high frequency output terminal connected to the output matching circuit, and a smoothing capacitor terminal connected to the high frequency semiconductor chip. The high frequency semiconductor chip, the input matching circuit and the output matching circuit are housed by one package.