Semiconductor Calibration Sample with Overlapping Doping Regions
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Solution Overview
Problem
Current methods for creating calibration samples for determining doping concentrations in semiconductor substrates are expensive and time-consuming, requiring accurate calibration for high spatial resolution which is not efficiently addressed by existing technologies.
Innovation Solution
A semiconductor device with multiple doping regions of different conductivity types and concentrations, where overlapping regions create a variety of areas with distinct doping concentrations, enabling fast and accurate calibration, and potentially used for growing organic electric circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional calibration samples are used for determining doping concentrations, then measurement precision is improved, but loss of time and manufacturing cost increase significantly
Solution Approach 1:
The calibration sample is segmented into multiple distinct doping regions (first doping regions with first conductivity type and different doping concentrations, second doping regions with second conductivity type and different doping concentrations) that can be independently characterized. This segmentation allows comprehensive calibration data to be obtained from a single sample, reducing the need for multiple separate calibration samples and thereby reducing calibration time while maintaining measurement precision.
Solution Approach 2:
Multiple doping regions with different conductivity types and doping concentrations are merged into a single calibration sample. By combining first doping regions and second doping regions with various doping concentrations in one substrate, the invention enables simultaneous calibration for multiple doping conditions, significantly reducing the time and cost associated with creating and managing multiple separate calibration samples.
2Adaptability or versatility
If multiple doping regions with different conductivity types and concentrations are created, then versatility for calibration and organic circuit growth is improved, but device complexity increases
Solution Approach 1:
Different regions of the semiconductor substrate are assigned different local qualities through selective doping. First doping regions contain dopants of a first conductivity type with specific doping concentrations, while second doping regions contain dopants of a second conductivity type with different doping concentrations. This local quality differentiation enables the single substrate to serve multiple functions including calibration for different doping conditions and as a substrate for growing organic electric circuits with specific electrical properties, thereby improving versatility without requiring multiple separate structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of calibration samples that facilitate efficient and precise calibration for scanning probe devices, reducing costs and time while providing a versatile substrate for organic electric circuit growth.
Implementation Method 1
forming a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure comprise dopants of a first conductivity type with different doping concentrations.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.