Semiconductor Cap Bump Electrode Anchoring
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Solution Overview
Problem
Conventional semiconductor devices face issues with weak adhesive properties between the cap and bump electrode, leading to separation at the bonding surface between the barrier metal and pad electrode, particularly in high-frequency devices.
Innovation Solution
The semiconductor device employs a bump electrode made of AuSn solder or Au Stud Bump, which is pressed into a through-hole electrode filled with Cu, with a barrier metal layer to prevent oxidation and enhance bonding strength, utilizing a thermocompression bonding method to create a reliable connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding methods are used between cap and bump electrode, then manufacturing process is simple, but adhesive property is weak and separation occurs at bonding surface
Solution Approach 1:
The invention transitions from surface-level bonding to three-dimensional anchoring by pressing the bump electrode into the through-hole electrode, creating mechanical interlocking in the depth dimension that significantly enhances adhesive strength and prevents separation
Solution Approach 2:
The bonding structure employs composite materials including AuSn solder or Au Stud Bump for the bump electrode, Cu for the through-hole electrode filling, and barrier metal layers, creating a multi-material system that optimizes both mechanical strength and electrical conductivity
2Strength
If barrier metal layer is added to prevent oxidation, then bonding strength is enhanced, but manufacturing process becomes more complex
Solution Approach 1:
The barrier metal layer is formed in advance on the through-hole electrode before Cu filling, preventing oxidation during subsequent manufacturing steps and ensuring consistent bonding performance without requiring additional oxidation prevention measures later
Solution Approach 2:
The barrier metal layer serves as an intermediary between the Cu filling and the surrounding environment, preventing direct contact with oxygen and moisture, thereby protecting the Cu electrode from oxidation while maintaining electrical conductivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a highly reliable connection structure with increased bonding strength, allowing for the integration of multiple high-frequency devices with reduced production costs and minimal signal loss, while maintaining low interference between components.
Implementation Method 1
the distal end portion of the bump electrode 3 is pressed into the through-hole electrode 8, so that the through-hole electrode 8 is deformed
Implementation Method 2
utilizing a thermocompression bonding method to create a reliable connection
Implementation Method 3
with a barrier metal layer to prevent oxidation and enhance bonding strength
Data Source
AI summary
A semiconductor device according to an embodiment includes a semiconductor chip, a cap disposed to face the semiconductor chip, and having a through-hole electrode arranged in a through hole, and a bump electrode provided between the semiconductor chip and the cap, wherein the bump electrode is in a protruding shape connecting the semiconductor chip and the through-hole electrode, and wherein at least a portion of the bump electrode is included in the through-hole electrode, and electrically connected thereto, so that the adhesive performance between the cap and the bump electrode can be increased.