Semiconductor Package Cap Layer Dam Structure Contamination Control

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Solution Overview

Problem

There is a need for semiconductor packages that can minimize contamination from conductive terminals while achieving miniaturization, as existing technologies face challenges in preventing contaminants from entering the active region of semiconductor dies during packaging processes.

Innovation Solution

A semiconductor package design that includes a semiconductor die, a cap layer, a conductive terminal, and a dam structure, where the conductive terminal penetrates the cap layer to connect with the semiconductor die, and the dam structure surrounds the terminal to form a gap, preventing contamination and allowing for reduced package size through wafer-level chip-scale packaging techniques.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If wire bonding or lid structures are used to protect the active region, then contamination prevention is improved, but package size increases

Engineering Contradiction:
Improvecontamination preventionVSAvoidpackage size
Core Design Contradiction:
Object-affected harmful factorsVSVolume of moving object

Solution Approach 1:

The package structure is segmented into distinct functional regions: the active region is isolated from the bonding region by a gap structure. This segmentation allows the active region to be protected without requiring a lid, as the gap physically separates contaminants generated during bonding operations from the active region, thereby preventing contamination while maintaining compact packaging.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The gap structure acts as an intermediary barrier between the bonding region and the active region. It mediates the conflict between enabling wire bonding operations and protecting the active region from contamination, allowing bonding to proceed while preventing flux and other contaminants from reaching the active region, thus eliminating the need for additional protective lid structures.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the package is miniaturized, then productivity and integration are improved, but contamination control becomes more difficult

Engineering Contradiction:
ImproveminiaturizationVSAvoidcontamination control
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The protection mechanism transitions from a vertical dimension (lid structures covering the active region) to a horizontal dimension (gap structures separating regions laterally). This dimensional change allows compact packaging without compromising contamination control, as the gap provides lateral isolation while maintaining a small overall package footprint suitable for miniaturization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If wire bonding structures are included, then electrical connection is improved, but device complexity increases

Engineering Contradiction:
Improveelectrical connectionVSAvoidpackage structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The lid structure, which is traditionally used to protect the active region during wire bonding, is extracted/removed from the package design. The gap structure takes over the protective function, simplifying the overall device structure while maintaining electrical connection reliability through wire bonding operations.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS11133278B2Semiconductor package including cap layer and dam structure and method of manufacturing the same
Publication Date: 2021.09.28 ADVANCED SEMICON ENG INC
  • US11133278B2 patent drawing
  • US11133278B2 patent drawing
  • US11133278B2 patent drawing

AI summary

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, a cap layer, a conductive terminal, and a dam structure. The semiconductor die has a first surface. The cap layer is over the semiconductor die and has a second surface facing the first surface of the semiconductor die. The conductive terminal penetrates the cap layer and electrically connects to the semiconductor die. The dam structure is between the semiconductor die and the cap layer and surrounds a portion of the conductive terminal between the first surface and the second surface, thereby forming a gap between the cap layer and the semiconductor die.