Semiconductor Capacitor with Aluminum Interconnection Structures
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Solution Overview
Problem
The increase in the number of interconnection layers in semiconductor devices degrades electrical characteristics and decreases productivity, making it challenging to maintain reliability and efficiency in manufacturing.
Innovation Solution
A semiconductor device design featuring a simplified manufacturing process with aluminum interconnection structures that include plug and pad structures, connected through insulating layers, which simplifies the formation process and enhances reliability by using aluminum layers and barrier layers for improved electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of interconnection layers is increased to connect more external circuits, then the connectivity and functionality are improved, but the electrical characteristics are degraded and productivity decreases
Solution Approach 1:
The patent merges the interconnection structure with the capacitor structure by forming aluminum interconnection layers (57A, 57B) that are integrated with the capacitor electrodes and insulating layers. This integration reduces the need for separate interconnection layers, thereby maintaining connectivity while reducing the total number of layers and preserving electrical characteristics.
Solution Approach 2:
The aluminum interconnection structures serve multiple functions: they act as both interconnection elements for connecting external circuits and as electrode structures for the capacitor. This multi-functionality allows the device to achieve both connectivity and capacitive functionality without requiring additional dedicated layers, thus improving productivity and maintaining electrical performance.
2Adaptability or versatility
If the number of interconnection layers is increased to connect more external circuits, then the connectivity and functionality are improved, but productivity decreases
Solution Approach 1:
The patent combines the formation of interconnection structures and capacitor structures into a single integrated manufacturing process. The aluminum layers are formed and patterned to serve both interconnection and capacitor electrode functions simultaneously, reducing the number of discrete manufacturing steps and improving productivity.
Solution Approach 2:
The aluminum interconnection structures are formed with preliminary patterning that defines both the interconnection paths and the capacitor electrode regions in advance. This preliminary action allows subsequent processing steps to work with a pre-defined structure, reducing the need for additional patterning steps and improving manufacturing efficiency.
3Ease of manufacture
If aluminum layers are used in interconnection structures, then the manufacturing process is simplified and reliability is improved, but compatibility with existing copper-based processes may be challenged
Solution Approach 1:
The patent changes the material parameter from copper to aluminum in the interconnection structures. Aluminum offers advantages in terms of ease of manufacture and reliability for this specific application, and the patent adapts the manufacturing parameters (such as deposition conditions, patterning processes, and annealing temperatures) to optimize aluminum layer formation and performance.
Data Source
AI summary
A semiconductor device includes a first electrode disposed on a substrate. A capacitor dielectric layer is on the first electrode. A second electrode is on the capacitor dielectric layer. A first insulating layer is on the first and second electrodes and the capacitor dielectric layer. A first interconnection structure is on the first insulating layer and connected to the first electrode. A second interconnection structure is on the first insulating layer and connected to the second electrode. A second insulating layer is on the first and second interconnection structures. A plurality of connection structures are configured to pass through the second insulating layer and be connected to the first and second interconnection structures. Each of the first and second interconnection structures has an aluminum layer.