Semiconductor Capacitor Layout Using CPODE Isolation
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Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in effectively isolating neighboring devices in three-dimensional structures using poly cut layers, which is inadequate for achieving high device packing density and performance, especially as technology scales down to nanometer nodes.
Innovation Solution
The implementation of a cutting structure, referred to as CPODE, which overlaps active regions to disconnect gates and electrical conductors without cutting them, allowing for higher capacitor capacitance density with reduced cell height and less influence on via layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If poly cut layer is used to isolate neighboring devices, then electrical isolation between devices is achieved, but device packing density and performance are compromised
Solution Approach 1:
The patent transitions from two-dimensional planar isolation to three-dimensional vertical isolation by forming isolation regions that extend downward into the substrate. The isolation structure includes a first isolation region extending from a first trench to a first depth, and a second isolation region extending from a second trench to a second depth, creating vertical separation between neighboring devices while maintaining horizontal packing density.
Solution Approach 2:
The isolation structure is divided into multiple segmented regions with different depths and positions. The first isolation region and second isolation region are separately formed in different trenches and extend to different depths, allowing independent optimization of isolation effectiveness for each device pair while minimizing overall impact on device density.
2Reliability
If traditional isolation methods are used, then device separation is achieved, but cell height increases reducing capacitance density
Solution Approach 1:
Instead of increasing horizontal separation distance which would increase cell footprint and height, the patent utilizes the vertical dimension by forming isolation regions that extend downward into the substrate. This vertical isolation approach achieves effective device separation while maintaining compact cell height, thereby preserving capacitance density.
Solution Approach 2:
The isolation regions are nested within the substrate structure, with the first isolation region nested in a first trench and the second isolation region nested in a second trench. This nested configuration allows isolation structures to be integrated within the existing device architecture without adding significant vertical height, maintaining capacitance density while achieving device separation.
Data Source
AI summary
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.